Ordering number : EN2851A
2SC4428
SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor
2SC4428
Features
•
•
•
•
•
800V / 6A Switching Regulator
Applications
High breakdown voltage, high reliability.
High-speed switching (tr : 0.1µs typ).
Wide ASO.
Adoption of MBIT process.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
PW≤300µs, duty cycle≤10%
Conditions
Ratings
1100
800
7
6
20
3
3
55
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=800V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.4A
VCE=5V, IC=2A
10*
8
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
Continued on next page.
* : The hFE1 of the 2SC4428 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
K
L
M
hFE
10 to 20
15 to 30
20 to 40
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 42506KB MS IM TB-00002147 / 13004TN (KT) / D1898HA (KT) / N248MO, TS No.2851-1/4
2SC4428
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
Conditions
VCE=10V, IC=0.4A
VCB=10V, f=1MHz
IC=3A, IB=0.6A
IC=3A, IB=0.6A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=3A, IB1=0.6A, IB2=--0.6A, L=1mH, Clamped
VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω
VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω
VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω
1100
800
7
800
0.5
3.0
0.3
Ratings
min
typ
15
120
2.0
1.5
max
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm
7502-002
16.0
3.4
5.0
8.0
Switching Time Test Circuit
IB1
5.6
3.1
INPUT
PW=20µs
D.C.≤1%
IB2
RB
VR
OUTPUT
RL
+
470µF
VCC=400V
21.0
22.0
50Ω
+
100µF
4.0
2.0
2.8
2.0
20.4
VBE= --5V
2.0
0.6
1.0
1
2
3
3.5
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
5.45
5.45
7
IC -- VCE
7
IC -- VBE
VCE=5V
6
6
Collector Current, IC -- A
5
Collector Current, IC -- A
4
25
°
C
0.8
3
200mA
2
150mA
3
100mA
2
1
50mA
IB=0mA
20mA
1
0
0
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
Ta=
1
0.6
--40
°
C
1.0
800mA
700mA
600mA
500mA
400mA
300mA
5
4
20
°
C
1.2
ITR06863
Collector-to-Emitter Voltage, VCE -- V
ITR06862
Base-to-Emitter Voltage, VBE -- V
No.2851-2/4
2SC4428
2
hFE -- IC
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
7
5
3
VCE(sat) -- IC
120
°
C
5 7 0.1
2
3
5 7 1.0
2
IC / IB=5
100
DC Current Gain, hFE
Ta=120
°C
25
°C
--40
°
C
1.0
7
5
3
2
0.1
7
5
3
2
10
7
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
10
7
7 10
ITR06864
5
3
0.01
2
3
Ta= --4
0
°
3
5
C
2
VBE(sat) -- IC
Collector Current, IC -- A
7
5 7 10
ITR06865
SW Time -- IC
ts
tg
IC / IB=5
Switching Time, SW Time --
µs
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
1.0
7
5
3
2
1.0
7
5
3
2
0.01
2
3
5
Ta= --40°C
25
°C
120
°
C
0.1
7
7 0.1
2
3
5
7 1.0
2
3
7 10
ITR06866
5
5
0.1
2
3
5
7
1.0
2
3
5
10
ITR06867
7
Collector Current, IC -- A
5
3
2
Collector Current, IC -- A
5
3
2
Forward Bias A S O
ICP=20A
Collector Current, IC -- A
IC=6A
P
DC
C =55
ope
W
rat
ion
s
1m
Reverse Bias A S O
Tc=25
°C
IB2= --0.6A
L=200µH
Collector Current, IC -- A
10
5
3
2
1.0
5
3
2
0.1
5
3
2
3
10
5
3
2
1.0
5
3
2
VR
TUT
L
Test Circuit
IB1
IB2
IC
Tc=25°C
Single pulse
5
7
10
2
3
5
7 100
2
3
0.1
5
7 1000
ITR06868
70
5
5
7
--5V
100
2
VCC=20V
3
5
7
1000
2
ITR06869
Collector-to-Emitter Voltage, VCE -- V
3.5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
3.0
60
Collector Dissipation, PC -- W
2.5
Collector Dissipation, PC -- W
50
No
2.0
he
at
40
sin
k
1.5
30
1.0
20
0.5
0
0
20
40
60
80
100
120
140
160
10
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR06870
Case Temperature, Tc --
°C
to
n
tf
ITR06871
No.2851-3/4
25
°
C
7
0
10
µ
s
ms
10
2SC4428
Transient Thermal Resistance, Rth(t) --
°C
/ W
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
2 3
5
1.0
2 3
5
10
2 3
5
100
2 3
5 1000
ITR06872
Rth(t) -- t
Tc=25
°C
Time, t -- ms
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.2851-4/4
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