2SJ146 datasheet, PDF - EEWORLD Datasheet

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2SJ146: DescriptionSmall Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size35KB，2 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SJ146 Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SC-59, 3 PIN

2SJ146 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3 pF
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Silicon MOS FETs (Small Signal)

2SJ146

Silicon P-Channel MOS FET

For switching

2.8

–0.3

+0.2

unit: mm

0.65±0.15

Features

High-speed switching

Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

0.65±0.15

1.5

–0.05

+0.25

0.95

2.9

–0.05

1.9±0.2

+0.2

0.95

0.4

–0.05

+0.1

Absolute Maximum Ratings

(Ta = 25°C)

1.1

–0.1

+0.2

1.45

Parameter

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Max drain current

Allowable power dissipation

Channel temperature

Storage temperature

Symbol

DSS

GSO

stg

Ratings

−50

−8

−100

−200

150

−55

to +150

Unit

°C

1: Gate

2: Source

3: Drain

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package (3-pin)

Marking Symbol: 4D

Electrical Characteristics

(Ta = 25°C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Forward transfer admittance

Drain to Source ON-resistance

Symbol

DSS

GSS

DSS

| Y

DS(on)

oss

on*

off*

Conditions

−30V,

= 0

−8V,

= 0

−100µA,

= 0

−5V,

−100µA

−10V,

−10mA,

f = 1kHz

−5V,

−10mA

−5V,

= 0, f = 1MHz

−5V,

= 0 to

−5V,

= 400Ω

−5V,

−5

to 0V, R

= 400Ω

−50

−1.5

13.5

150

−3.5

min

typ

max

−10

−1

Unit

µA

Ω

Input capacitance (Common Source) C

iss

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source) C

rss

Turn-on time

Turn-off time

, t

off

measurement circuit

out

400Ω

10%

90%

10%

100µF

= –5V

50Ω

= –5V

out

off

0 to 0.1

0.1 to 0.3

0.4±0.2

0.8

0.16

–0.06

+0.1

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