BC141-16 datasheet, PDF - EEWORLD Datasheet

BC141-16: Description1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39; CategoryDiscrete semiconductor The transistor; File Size30KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	25 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	3.7 W
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	850 ns
Maximum opening time (tons)	250 ns
VCEsat-Max	1 V

	BC141-16	BC140-16
Description	1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it Rohs certified?	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	25 pF	25 pF
Collector-emitter maximum voltage	60 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JEDEC-95 code	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power consumption environment	3.7 W	3.7 W
Maximum power dissipation(Abs)	0.75 W	0.75 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz
Maximum off time (toff)	850 ns	850 ns
Maximum opening time (tons)	250 ns	250 ns
VCEsat-Max	1 V	1 V

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