tSzrni-C on
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN medium power transistors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
PINNING
BC140; BC141
PIN
1
2
3
emitter
base
DESCRIPTION
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
BC140
VCEO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
-
-
-
-
-
-
-
-
100
160
-
80
100
40
60
1.5
3.7
160
250
-
MHz
V
V
V
V
A
W
MIN.
TYP.
MAX.
UNIT
ICM
Plot
BC141
collector-emitter voltage
BC140
BC141
peak collector current
total power dissipation
DC current gain
BC140-10;BC141-10
BC140-16; BC141-16
transition frequency
open base
-
-
-
T
case
< 45 'C
l
c
= 1 00 mA; V
CE
= 1 V
-
63
100
hFE
fr
l
c
= 50 mA; V
CE
= 1 0 V; f = 1 00 MHz 50
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a
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NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
BC140
VCEO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC140; BC141
MIN.
-
MAX.
80
100
40
60
7
1
1.5
200
3.7
+150
175
+150
UNIT
BC141
collector-emitter voltage
BC140
BC141
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
V
V
V
V
V
A
A
mA
W
"C
C
'C
open base
-
open collector
VEBO
-
-
-
-
-
-65
-
-65
Ic
I CM
IBM
Plot
Tstg
Tease < 45 ' C
Tj
Tamb
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rthj-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
UNIT
200
35
K/W
K/W
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