Power Transistors
2SD2053
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1362
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
15.0±0.5
13.0±0.5
4.0±0.1
4.5±0.2
4.0±0.1
q
q
q
q
15.0±0.2
High breakdown voltage: V
CEO
= 150V
Satisfactory linearity of foward current transfer ratio h
FE
Wide area of safe operation (ASO)
High transition frequency f
T
(T
C
=25˚C)
16.2±0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
nt
in
I
CBO
I
EBO
h
FE1
h
FE3
V
BE
f
T
C
ob
/D
Forward current transfer ratio
h
FE2*
en
Collector to emitter saturation voltage
an
Base to emitter voltage
V
CE(sat)
nt
Transition frequency
M
ai
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
Rank
h
FE2
Pl
e
100 to 200
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
10.5±0.5
2.0±0.1
20.0±0.3
19.0±0.3
φ3.2±0.1
3.5
2.0±0.2
12.5
s
Features
Ratings
150
150
5
Unit
V
V
V
A
A
1.1±0.1
1.4±0.3
5.45±0.3
0.6±0.2
10.9±0.5
2
1
3
15
9
100
2.5
W
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
150
˚C
˚C
–55 to +150
ue
Conditions
min
typ
max
50
50
Unit
µA
µA
V
CB
= 150V, I
E
= 0
V
EB
= 3V, I
C
= 0
co
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 7A
20
60
20
is
200
ce
1.8
2.0
V
V
I
C
= 7A, I
B
= 0.7A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
20
MHz
pF
V
CB
= 10V, I
E
= 0, f = 1MHz
150
P
1
Power Transistors
P
C
— Ta
160
20
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.5W)
(1)
T
C
=25˚C
I
B
=1000mA
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
8
100mA
4
20 (2)
(3)
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
50mA
2SD2053
I
C
— V
CE
20
V
CE
=5V
I
C
— V
BE
Collector power dissipation P
C
(W)
140
120
100
80
60
40
Collector current I
C
(A)
Collector current I
C
(A)
16
16
25˚C
12
T
C
=–25˚C
100˚C
12
8
4
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
T
C
=100˚C
25˚C
–25˚C
10000
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
25˚C
30
10
3
1
0.1
–25˚C
T
C
=100˚C
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
Area of safe operation (ASO)
100
I
E
=0
f=1MHz
T
C
=25˚C
30
I
CP
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
3000
Collector current I
C
(A)
10
I
C
3
100ms
1
0.3
0.1
0.03
DC
t=10ms
1000
300
100
30
10
1
3
10
30
100
0.01
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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