DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF872
PNP high-voltage transistor
Product specification
Supersedes data of 1998 Sep 21
1999 Apr 21
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
Low feedback capacitance.
handbook, halfpage
BF872
APPLICATIONS
•
For use in class-B video output stages of colour
television receivers.
DESCRIPTION
PNP transistors in a TO-202 plastic package.
NPN complement: BF871.
PINNING
PIN
1
2
3
emitter
collector, connected to mounting base
base
Fig.1
Simplified outline (TO-202) and symbol.
DESCRIPTION
1 2 3
3
1
2
MBH792
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
mb
≤
25
°C
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−300
−300
−5
−50
−100
−50
1.6
5
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
W
°C
°C
°C
1999 Apr 21
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
78
25
BF872
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−200
V
I
E
= 0; V
CB
=
−200
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−25
mA; V
CE
=
−20
V
I
C
= i
c
= 0; V
CE
=
−30
V; f = 1MHz
I
C
=
−10
mA; V
CE
=
−10
V;
f = 100 MHz
−
−
−
50
−
−
60
MIN.
MAX.
−10
−10
−50
−
−600
2.2
−
mV
pF
MHz
UNIT
nA
µA
nA
collector-emitter saturation voltage I
C
=
−30
mA; I
B
=
−5
mA
1999 Apr 21
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
E1
P
c
1
BF872
SOT128B
P1
HE
D
L2
L1
L
1
2
bp
e1
e
E
3
w
M
Q
A
c
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.6
4.4
bp
0.8
0.6
c
0.65
0.5
c1
0.56
0.46
D
8.6
8.4
E
10.1
9.9
E
1
10.4
10.0
e
5.08
5
scale
e1
2.54
10 mm
HE
24.2
23.8
L
13.3
12.2
L1
2.4
2.0
L2
(1)
max
2.5
P
3.8
3.6
P1
3.9
3.7
Q
1.7
1.5
w
0.25
Note
1. Plastic flash allowed within this zone
OUTLINE
VERSION
SOT128B
REFERENCES
IEC
JEDEC
TO-202
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 21
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BF872
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 21
5
京公网安备 11010802033920号
EEWORLD
