SCA-CA64ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
Description
The SCA-CA64ES is a back-illuminated silicon photodiode
array for use in applications where peak sensitivity from
480nm to 800nm is required.
Array Configuration
The ultra low cross talk between cells enhances photon
detection. Back illumination allows for easy scintillator
attachment.
The SCA-CA64ES is offered in chip configuration or on a
hybrid board that holds associated components for a complete
imaging module. The array configuration encourages tiling to
create large dimension arrays.
Features
•
Flip Chip Configuration
•
Back Illuminated
•
Low Cross Talk
The hybrid is capable of meeting MIL-STD-883 requirements
for electrical testing, environmental integrity and reliability.
Benefits
•
High Reliability
•
2D Tile-able Layout
Please contact the Strategic Marketing Manager for special configurations
www.SEMICOA.com or (714) 242-3007
•
Good Temperature Stability
Absolute Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature
(t
≤
5 seconds)
Symbol
T
OP
T
STG
T
SOL
Rating
-45 to +80
-55 to +150
260
Unit
°C
°C
°C
Copyright© 2004
Rev. 4.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 3
www.SEMICOA.com
SCA-CA64ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
DEVICE CHARACTERISTICS
Mechanical Characteristics
Active Area Size
Pixel Pitch
d
A
0.85 x 0.85
1.0
mm
mm
Optical Characteristics
Spectral Response
Peak Sensitivity Wavelength
λ
λ
p
400 to 1100
850
nm
nm
characteristics specified at T
A
= 25°C
Electrical Characteristics
Parameter
Dark Current
Sensitivity
Internal Quantum Efficiency
Sensitivity Uniformity
Channel-to-Channel
CrossTalk*
Channel-to-Channel
Reverse Breakdown Voltage
Forward Voltage Uniformity
Shunt Resistance
Noise Equivalent Power
Response Time
Capacitance
Tempco of Dark Current
Tempco of Sensitivity
Symbol
I
D
S
QE
int
Test Conditions
V
R
= 10 mV
λ
= 500 nm
λ
= 600 nm
450 nm
≤ λ ≤
750 nm
at wavelength
adjacent channels
non-adjacent channels
BV
R
V
F
R
S
NEP
t
R
C
j
I
R
= 10
µA
I
F
= 1 mA
V
R
=
±
10 mV
λ
= 480 nm
V
R
= 0 V, Load = 10 kΩ
V
R
= 5 V, f = 1 MHz
V
R
= 10 mV
at wavelength
20
1.07
±0.05
500
4,000
2 x 10
-14
1
5
0.2
0.02
10
0.3
0.4
95
100
±2.0
0.5
0.05
±15
Min
Typ
0.1
Max
1.0
Units
pA
A/W
%
%
%
V
%
MΩ
W/√Hz
µs
pF
times/
°C
%/
°C
*Cross talk measured with 0.001” diameter spot centered on active area.
Specifications are subject to change without notice. Please consult the website or factory for current information.
Copyright© 2004
Rev. 4.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 3
www.SEMICOA.com
SCA-CA64ES
Silicon PIN Photodiode Array
P r e lim inar y Da ta She e t
ARRAY DIMENSIONS
1.0 mm
(0.040")
0.85 mm
(0.034")
1.0 mm 0.85 mm
(0.040") (0.034")
0.15 mm
(0.006")
0.15 mm
(0.006")
8 mm
(0.315")
8 mm
(0.315")
Copyright© 2004
Rev. 4.1
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 3 of 3
www.SEMICOA.com
LED Zone
京公网安备 11010802033920号
EEWORLD
