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5962-3826717QMX

Description
EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32
Categorystorage    storage   
File Size325KB,19 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric Compare View All

5962-3826717QMX Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32

5962-3826717QMX Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionCERAMIC, FP-32
Contacts32
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time200 ns
JESD-30 codeR-CDFP-F32
length20.828 mm
memory density1048576 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusQualified
Filter levelMIL-PRF-38535 Class Q
Maximum seat height3.1242 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width11.05 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
EEPROM
Austin Semiconductor, Inc.
128K x 8 EEPROM
EEPROM Memory
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
l
MIL-STD-883
l
AS58C1001
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
High speed: 150, 200, and 250ns
l
Data Retention: 10 Years
l
Low power dissipation, active current (20mW/MHz (TYP)),
standby current (100µW(MAX))
l
Single +5V (+10%) power supply
l
Data Polling and Ready/Busy Signals
l
Erase/Write Endurance (10,000 cycles in a page mode)
l
Software Data protection Algorithm
l
Data Protection Circuitry during power on/off
l
Hardware Data Protection with RES pin
l
Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
l
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in
system electrical Byte and Page reprogrammability.
The AS58C1001 achieves high speed access, low power consump-
tion, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make its
erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection. Hard-
ware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and off.
Software data protection is implemented using JEDEC Optional Stan-
dard algorithm.
The AS58C1001 is designed for high reliability in the most de-
manding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles in
the Page Mode.
OPTIONS
l
MARKINGS
l
l
Timing
150ns access
-15
200ns access
-20
250ns access
-25
Packages
Ceramic Flat Pack
F
Radiation Shielded Ceramic FP* SF
Ceramic SOJ
DCJ
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
-Industrial (-40
o
C to +85
o
C)
No. 306
No. 305
No. 508
XT
IT
*NOTE: Package lid is connected to ground (Vss).
PIN NAME
A0 to A16
I/O0 to I/O7
OE\
CE\
WE\
Vcc
Vss
RDY/Busy\
RES\
AS58C1001
Rev. 4.0 3/01
FUNCTION
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
Ready busy
Reset
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

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Description EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32 EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32 EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32 EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32 EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32 EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32
Parts packaging code DFP DFP DFP DFP DFP DFP
package instruction CERAMIC, FP-32 CERAMIC, FP-32 CERAMIC, FP-32 CERAMIC, FP-32 CERAMIC, FP-32 CERAMIC, FP-32
Contacts 32 32 32 32 32 32
Reach Compliance Code compli compli compli compli compli compli
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 200 ns 200 ns 250 ns 250 ns 150 ns 150 ns
JESD-30 code R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32 R-CDFP-F32
length 20.828 mm 20.828 mm 20.828 mm 20.828 mm 20.828 mm 20.828 mm
memory density 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DFP DFP DFP DFP DFP DFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Qualified Qualified Qualified Qualified Qualified Qualified
Filter level MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q
Maximum seat height 3.1242 mm 3.81 mm 3.81 mm 3.1242 mm 3.1242 mm 3.81 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 11.05 mm 11.05 mm 11.05 mm 11.05 mm 11.05 mm 11.05 mm
Maximum write cycle time (tWC) 10 ms 10 ms 10 ms 10 ms 10 ms 10 ms
Base Number Matches 1 1 1 1 1 1
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