5962-3826717QNX datasheet, PDF

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5962-3826717QNX: DescriptionEEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32; Categorystorage storage; File Size325KB，19 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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5962-3826717QNX Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32

5962-3826717QNX Parametric

Parameter Name	Attribute value
Parts packaging code	DFP
package instruction	CERAMIC, FP-32
Contacts	32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	200 ns
JESD-30 code	R-CDFP-F32
length	20.828 mm
memory density	1048576 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum seat height	3.81 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	11.05 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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EEPROM

Austin Semiconductor, Inc.

128K x 8 EEPROM

EEPROM Memory

AVAILABLE AS MILITARY

SPECIFICATIONS

SMD 5962-38267

MIL-STD-883

AS58C1001

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)

RDY/BUSY\

A16

A14

A12

I/O 0

I/O 1

I/O 2

Vss

Vcc

A15

RES\

WE\

A13

A11

OE\

A10

CE\

I/O 7

I/O 6

I/O 5

I/O 4

I/O 3

FEATURES

High speed: 150, 200, and 250ns

Data Retention: 10 Years

Low power dissipation, active current (20mW/MHz (TYP)),

standby current (100µW(MAX))

Single +5V (+10%) power supply

Data Polling and Ready/Busy Signals

Erase/Write Endurance (10,000 cycles in a page mode)

Software Data protection Algorithm

Data Protection Circuitry during power on/off

Hardware Data Protection with RES pin

Automatic Programming:

Automatic Page Write: 10ms (MAX)

128 Byte page size

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS58C1001 is capable or in

system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consump-

tion, and a high level of reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology and

CMOS process and circuitry technology.

This device has a 128-Byte Page Programming function to make its

erase and write operations faster. The AS58C1001 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

This EEPROM provides several levels of data protection. Hard-

ware data protection is provided with the RES pin, in addition to noise

protection on the WE signal and write inhibit during power on and off.

Software data protection is implemented using JEDEC Optional Stan-

dard algorithm.

The AS58C1001 is designed for high reliability in the most de-

manding applications. Data retention is specified for 10 years and

erase/write endurance is guaranteed to a minimum of 10,000 cycles in

the Page Mode.

OPTIONS

MARKINGS

Timing

150ns access

-15

200ns access

-20

250ns access

-25

Packages

Ceramic Flat Pack

Radiation Shielded Ceramic FP* SF

Ceramic SOJ

DCJ

Operating Temperature Ranges

-Military (-55

C to +125

-Industrial (-40

C to +85

No. 306

No. 305

No. 508

*NOTE: Package lid is connected to ground (Vss).

PIN NAME

A0 to A16

I/O0 to I/O7

OE\

CE\

WE\

Vcc

Vss

RDY/Busy\

RES\

AS58C1001

Rev. 4.0 3/01

FUNCTION

Address input

Data input/output

Output enable

Chip enable

Write enable

Power supply

Ground

Ready busy

Reset

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

5962-3826717QNX Related Products

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Description	EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32	EEPROM, 128KX8, 200ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32	EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32	EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32, CERAMIC, FP-32
Parts packaging code	DFP	DFP	DFP	DFP	DFP	DFP
package instruction	CERAMIC, FP-32	CERAMIC, FP-32	CERAMIC, FP-32	CERAMIC, FP-32	CERAMIC, FP-32	CERAMIC, FP-32
Contacts	32	32	32	32	32	32
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	200 ns	200 ns	250 ns	250 ns	150 ns	150 ns
JESD-30 code	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32
length	20.828 mm	20.828 mm	20.828 mm	20.828 mm	20.828 mm	20.828 mm
memory density	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DFP	DFP	DFP	DFP	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
Filter level	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q
Maximum seat height	3.81 mm	3.1242 mm	3.81 mm	3.1242 mm	3.1242 mm	3.81 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	11.05 mm	11.05 mm	11.05 mm	11.05 mm	11.05 mm	11.05 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
Base Number Matches	1	1	1	1	1	1

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