5962-9207803HXC datasheet, PDF

5962-9207803HXC: DescriptionSRAM Module, 512KX8, 85ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32; Categorystorage storage; File Size120KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-9207803HXC Overview

SRAM Module, 512KX8, 85ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	85 ns
JESD-30 code	R-CDIP-T32
JESD-609 code	e4
length	40.6 mm
memory density	4194304 bi
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.1 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Base Number Matches	1

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