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FZT951TC

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size140KB,5 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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FZT951TC Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FZT951TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.46 V
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
*
P
tot
= 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
R
CE(sat)
55m at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
FZT951
FZT953
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-15
-5
3
-55 to +150
FZT951
-100
-60
-6
-10
FZT953
-140
-100
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum

3 - 279

FZT951TC Related Products

FZT951TC FZT951TA FZT953TA FZT953TC
Description Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
Is it Rohs certified? conform to conform to conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 60 V 60 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 30 30
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
Maximum power consumption environment 3 W 3 W 3 W 3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 125 MHz 125 MHz
VCEsat-Max 0.46 V 0.46 V 0.42 V 0.42 V
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