SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage battery
systems
• These diodes are also available in the SOD-123 and
SOD-323 case with type designations SD103AW(S)-V to
SD103CW(S)-V, and in the MiniMELF case with type
designations LL103A thru LL103C
• For general purpose applications
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
APPLICATIONS
•
•
•
•
HF-detector
Protection circuit
Small battery charger
AC-DC/DC-DC converters
PARTS TABLE
PART
SD103A
SD103B
SD103C
TYPE
DIFFERENTATION
V
R
= 40 V
V
R
= 30 V
V
R
= 20 V
ORDERING CODE
SD103A-TR or SD103A-TAP
SD103B-TR or SD103B-TAP
SD103C-TR or SD103C-TAP
TYPE MARKING
SD103A
SD103B
SD103C
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
Tape and reel/ammopack
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak inverse voltage
Power dissipation (infinite heatsink)
Single cycle surge 60 Hz sine wave
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(1)
TEST CONDITION
PART
SD103A
SD103B
SD103C
SYMBOL
V
R
V
R
V
R
P
tot
I
FSM
VALUE
40
30
20
400
15
UNIT
V
V
V
mW
A
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
VALUE
310
125
- 55 to + 150
UNIT
K/W
°C
°C
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Rev. 1.7, 06-May-13
Document Number: 85754
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 50 μA
V
R
= 30 V
PART
SD103A
SD103B
SD103C
SD103A
SD103B
SD103C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
C
D
t
rr
50
10
MIN.
40
30
20
5
5
5
370
600
TYP.
MAX.
UNIT
V
V
V
μA
μA
μA
mV
mV
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current
V
R
= 20 V
V
R
= 10 V
I
F
= 20 mA
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
Forward voltage drop
Diode capacitance
Reverse recovery time
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
100
10
1
10 000
I
F
- Forward Current (mA)
I
R
- Reverse Current (µA)
1000
100
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
10
1
0
16767
20
40
60
80
100
120
140
160
16765
V
F
- Forward
Voltage
(mV)
T
j
- Junction Temperature (°C)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 3 -
Reverse Current vs. Junction Temperature
5
30
f = 1 MHz
C
D
- Diode Capacitance (pF)
I
F
- Forward Current (A)
4
25
20
15
10
5
0
3
2
1
0
0.0
16766
0.5
1.0
1.5
2.0
16768
0
5
10
15
20
25
30
V
F
- Forward
Voltage
(V)
V
R
- Reverse
Voltage
(V)
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
Rev. 1.7, 06-May-13
Document Number: 85754
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
25
I
tot
- Typ.
Non
Repetitve
Forward Surge Current (A)
20
15
10
5
0
0.1
16769
1.0
10.0
t
P
- Pulse
width
(ms)
Fig. 5 -
Typical Non-Repetitive Forward Surge Current vs.
Pulse Width
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.7, 06-May-13
Document Number: 85754
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.3 [0.050]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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