HN27C4001G Series
524288-word
×
8-bit CMOS UV Erasable and Programmable ROM
Description
The Hitachi HN27C4001G is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring
high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry
technique, the HN27C4001G makes high speed access time possible. Therefore, it is suitable for high speed
microcomputer systems. The HN27C4001G offers high speed programming using page programming mode.
Features
•
High speed
Access time: 100 ns/120 ns/150 ns (max)
•
Low power dissipation
Standby mode: 5
µW(typ)
Active mode: 35 mW/MHz (typ)
Fast high reliability page programming and fast high-reliability programming
Programming voltage: +12.5 V D.C.
Program time: 3.5 sec (min) (Theoretical in page programming)
Inputs and outputs TTL compatible during both read and program modes
Pin arrangement
32-pin JEDEC standard
Device identifier mode
Manufacturer code and device code
•
•
•
•
Ordering Information
Type No.
HN27C4001G-10
HN27C4001G-12
HN27C4001G-15
Access Time
100 ns
120 ns
150 ns
Package
600 mil 32-pin Cerdip (DG-32A)
HN27C4001G Series
Mode Selection
Mode
Read
Output disable
Standby
Page program Page program set
Page data latch
Page program
Page program
verify
Pin
CE
(22)
OE
(24) A9 (26) V
PP
(1)
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
V
IH
X
V
H *2
V
H *2
V
IH
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
X
X
X
X
X
X
X
X
X
X
X
X
V
H *2
V
SS
– V
CC
V
SS
– V
CC
V
SS
– V
CC
V
PP
V
PP
V
PP
V
PP
V
CC
V
PP
V
PP
V
PP
V
PP
V
SS
– V
CC
V
CC
(32)
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
I/O (13 – 15, 17 – 21)
Dout
High-Z
High-Z
High-Z
Din
High-Z
Dout
High-Z
Din
Dout
Dout
High-Z
Code
Page program reset V
IH
Word program Program
Program verify
Optional verify
Program inhibit
Identifier
Notes: 1. X: Don’t care.
2. V
H
: 12.0 V
±
0.5 V.
V
IL
V
IH
V
IL
V
IH
V
IL
Absolute Maximum Ratings
Parameter
All input and output voltages
*1
Voltage on Pin A9 and
OE
Vpp voltage
*1
Vcc voltage
*1
Operating temperature range
Storage temperature range
*3
Storage temperature range under bias
Symbol
Vin, Vout
V
ID
V
PP
V
CC
Topr
Tstg
Tbias
Value
–0.6
*2
to +7.0
–0.6
*2
to +13.0
–0.6 to +13.5
–0.6 to +7.0
0 to +70
–65 to +125
–20 to +80
Unit
V
V
V
V
°C
°C
°C
Notes: 1. Relative to V
SS
.
2. Vin, Vout, V
ID
min = –2.0 V for pulse width
≤
20 ns.
3. Storage temperature range of device before programming.
4
HN27C4001G Series
Capacitance
(Ta = 25°C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
Cin
Cout
Min
—
—
Typ
—
—
Max
12
20
Unit
pF
pF
Test Conditions
Vin = 0 V
Vout = 0 V
Read Operation
DC Characteristics
(V
CC
= 5 V
±
10%, V
PP
= V
SS
to V
CC
, Ta = 0 to +70°C)
Parameter
Input leakage current
Output leakage current
Vpp current
Standby V
CC
current
Symbol
I
LI
I
LO
I
PP1
I
SB1
I
SB2
Operating V
CC
current
I
CC1
I
CC2
Input voltage
V
IL
V
IH
Output voltage
V
OL
V
OH
Min
—
—
—
—
—
—
—
–0.3
*1
2.2
—
2.4
Typ
—
—
1
—
1
—
—
—
—
—
—
Max
2
2
20
1
20
30
100
0.8
V
CC
+ 1
*2
0.45
—
Unit
µA
µA
µA
mA
µA
mA
mA
V
V
V
V
I
OL
= 2.1 mA
I
OH
= –400
µA
Test Conditions
Vin = 5.5 V
Vout = 5.5 V/0.45 V
Vpp = 5.5 V
CE
= V
IH
CE
= V
CC
±
0.3 V
Iout = 0 mA, f = 1 MHz
Iout = 0 mA, f = 10 MHz
Notes: 1. V
IL
min = –1.0 V for pulse width
≤
50 ns.
V
IL
min = –2.0 V for pulse width
≤
20 ns.
2. V
IH
max = V
CC
+1.5 V for pulse width
≤
20 ns.
If V
IH
is over the specified maximum value, read operation cannot be guaranteed.
5
Microcontroller MCU
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