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BFG403WT/R

Description
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CMPAK-4, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size83KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BFG403WT/R Overview

TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CMPAK-4, BIP RF Small Signal

BFG403WT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, CMPAK-4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionEMITTER
Maximum collector current (IC)0.0036 A
Collector-emitter maximum voltage4.5 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandL BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment0.016 W
Maximum power dissipation(Abs)0.016 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)17000 MHz
DISCRETE SEMICONDUCTORS
BFG403W
NPN 17 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
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