EEPROM
Austin Semiconductor, Inc.
128K x 8 EEPROM
EEPROM Memory
5 Volt, Byte Alterable
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
MIL-PRF-38535
AS28C010
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
WE\
NC
A14
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
Access speed: 120, 150, 200, and 250ns
Data Retention: 100 Years
Low power, active current: 50mA, standby current: 500uA
Single +5V (+10%) power supply
Data Polling and Toggle
Erase/Write Endurance (10,000 byte mode / 100,000 page
mode)
Software Data protection Algorithm
Automatic , Self-Timed Byte Write
Automatic Programming:
Automatic Page Write: 10ms (MAX)
OPTIONS
MARKINGS
-12
-15
-20
-25
F
CW
XT
IT
883C
Timing
120ns access
150ns access
200ns access
250ns access
Packages
Ceramic Flat Pack
CerDIP, 600 mil
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
-Industrial (-40
o
C to +85
o
C)
-Full Military Class M Processing
*NOTE:
Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS28C010 is capable of in system
electrical Byte and Page reprogrammability.
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make its
erase and write operations faster. The AS28C010 features Data
Polling and a toggle signal to indicate completion of erase and program-
ming operations.
This EEPROM provides several levels of data protection., in
AS28C010
Rev. 1.5 5/06
addition to noise protection on the WE signal and write inhibit during
power on and off. Software data protection is implemented using
JEDEC
Optional
Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles in
the Page Mode and 10,000 cycles in the Byte Mode.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
EEPROM
Austin Semiconductor, Inc.
AS28C010
FUNCTIONAL BLOCK DIAGRAM
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
EEPROM
Austin Semiconductor, Inc.
FUNCTIONAL DESCRIPTION
READ
Read operations are initiated by both OE\ and CE\ LOW.
The read operation is terminated by either CE\ or OE\ returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in a
high impedance state when either OE\ or CE\ is HIGH.
Figure 1: Status Bit Assignment
I/O
DP
TB
5
4
3
2
1
0
AS28C010
RESERVED
TOGGLE BIT
DATA\ POLLING
DATA\ POLLING
The AS28C010 features DATA\ Polling as a method to
indicate to the host system that the byte write or page write
cycle has completed. DATA\ Polling allows a simple bit test
operation to determine the status of the AS28C010, eliminating
additional interrupt inputs or external hardware. During the
internal programming cycle, any attempt to
read the last byte written will produce the complement of that
data on I/O
7
(i.e., write data = 0xxx xxxx, read data = 1xxx xxxx).
Once the programming cycle is complete, I/O
7
will reflect true
data. Note: If the AS28C010 is in the protected state and an
illegal write operation is attempted DATA\ Polling will not
operate.
WRITE
Write operations are initiated when both CE\ and WE\ are
LOW and OE\ is HIGH. The AS28C010 supports both a CE\
and WE\ controlled write cycle. That is, the address is latched
by the falling edge of either CE\ or WE\, whichever occurs last.
Similarly, the data is latched internally by the rising edge of
either CE\ or WE\, whichever occurs first. A byte write
operation, once initiated, will automatically continue to
completion, typically within 5ms.
PAGE WRITE
The page write feature of the AS28C010 allows the entire
memory to be written in 5 seconds. Page write allows two to
two hundred fifty-six bytes of data to be consecutively written
to the AS28C010 prior to the commencement of the internal
programming cycle. The host can fetch data from another
device within the system during a page write operation (change
the source address), but the page address (A
8
through A
16
)
for each subsequent valid write cycle to the part during this
operation must be the same as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to two hundred fifty six bytes in the
same manner as the first byte was written. Each successive
byte load cycle, started by the WE\ HIGH to LOW transition,
must begin within 100µs of the falling edge of the preceding
WE\. If a subsequent WE\ HIGH to LOW transition is not
detected within 100µs, the internal automatic programming cycle
will commence. There is no page write window limitation.
Effectively the page write window is infinitely wide, so long as
the host continues to access the device within the byte load
cycle time of 100µs.
TOGGLE BIT
The AS28C010 also provides another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O
6
will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease and the device will be accessible for additional read or
write operations.
WRITE
The AS28C010 provides the user two write operation
status bits. These can be used to optimize a system write cycle
time. The status bits are mapped onto the I/O bus as shown in
Figure 1.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
EEPROM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V
1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V
1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55
o
C to +125
o
C
Soldering Temperature Range...............................................260
o
C
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
AS28C010
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< 125
o
C; Vcc = 5V +10%)
PARAMETER
1
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
1
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
SYMBOL
V
IH
V
IL
I
LI
I
LO
V
OH
V
OL
MIN
2.0
-1.0
MAX
V
CC
+ 1.0V
0.8
10
10
0.4
UNITS
V
V
V
IN
= V
SS
to V
CC
V
OUT
=V
SS
to Vcc, CE\=V
IH
I
OH
= -400 A
I
OL
= 2.1 mA
2.4
V
V
Notes: 1) V
IL
min. and V
IH
max. are for reference only and are not tested.
PARAMETER
Power Supply Current:
Operating
CONDITIONS
I
OUT
=OmA, Vcc = 5.5V
Cycle=MIN
SYM
I
CC3
-12
100
MAX
-15
-20
100
80
-25
80
UNITS NOTES
mA
CE\=Vcc, Vcc = 5.5V
Power Supply Current:
Standby
CE\=V
IH
, Vcc = 5.5V
I
CC1
500
500
500
500
A
I
CC2
3
3
3
3
mA
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
EEPROM
Austin Semiconductor, Inc.
CAPACITANCE
T
A
=+25
o
C, f= 1MHZ, V
CC
=5V
PARAMETER
Input Capacitance
Input / Output Capactiance
SYMBOL
C
IN(2)
C
I/O(2)
MAX
10
10
UNITS
pF
pF
Test Conditions
V
IN
=0V
V
I/O
=0V
AS28C010
POWER-UP TIMING
Symbol
t
PUR (2)
t
PUW (2)
Parameter
Power-up to Read Operation
Power-up to Write Operation
Max.
100
5
Units
s
ms
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Endurance
Data Retention
Min.
10,000
100,000
100
Max.
Units
Cycles Per Byte
Cycles Per Page
Years
MODE SELECTION
MODE
READ
STANDBY
WRITE
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
OE\
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
I/O
D
OUT
High-Z
D
IN
High-Z
---
---
Data Out
(I/O7)
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
0V to 3V
10ns
1.5V
DESELECT
WRITE
INHIBIT
DATA
POLLING
EQUIVALENT A.C. LOAD CURRENT
SYMBOL TABLE
Notes: (2) This parameter is periodically sampled and not 100% tested.
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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