DSS6-0025BS
preliminary
Schottky Diode
V
RRM
I
FAV
V
F
=
=
=
25 V
6A
0.3 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSS6-0025BS
Marking on Product: 6Y025AS
Backside: cathode
1
3
4
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-252 (DPak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c
© 2016 IXYS all rights reserved
DSS6-0025BS
preliminary
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
25 V
25 V
6A
12 A
6A
12 A
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.18
15.9
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
5 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
639
40
120
V
mΩ
K/W
W
A
pF
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 100°C
T
VJ
= 25°C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
25
V
25
5
40
0.40
0.47
0.30
0.40
6
V
mA
mA
V
V
V
V
A
V
R
=
V
R
=
I
F
=
I
F
=
I
F
=
I
F
=
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 140 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
3 K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c
© 2016 IXYS all rights reserved
DSS6-0025BS
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
1)
TO-252 (DPak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
20
150
125
150
Unit
A
°C
°C
°C
g
N
0.3
mounting force with clip
20
60
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Logo
Part number
IXYS
abcdefg
Z YY
WW
Assembly Line
Date Code
Ordering
Standard
Ordering Number
DSS6-0025BS
Marking on Product
6Y025AS
Delivery Mode
Tape & Reel
Quantity
2500
Code No.
499064
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.18
12.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160803c
© 2016 IXYS all rights reserved
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