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BFG35

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size747KB,13 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BFG35 Overview

Transistor,

BFG35 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)4000 MHz
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