Preliminary
Datasheet
BCR3PM-12LG
Triac
Medium Power Use
Features
I
T (RMS)
: 3 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 20 mA
V
iso
: 2000 V
R07DS0099EJ0300
(Previous: REJ03G1506-0200)
Rev.3.00
Sep 13, 2010
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric
fans, solenoid driver, small motor control, and other general purpose control applications
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Ratings
3.0
30
3.7
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Voltage class
12
600
720
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 130C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
T
2
G terminal to case
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Page 1 of 7
BCR3PM-12LG
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
5/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
5.2
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 4.5 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C/150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 7
BCR3PM-12LG
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
7
5
3
2
10
0
7
5
3
2
10
–1
1
Rated Surge On-State Current
40
Surge On-State Current (A)
35
30
25
20
15
10
5
0
0
10
2 3
5 7 10
1
On-State Current (A)
Tj = 150°C
Tj = 25°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
2 3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
2
P
G(AV)
= 0.5W
V
GM
= 10V
P
GM
= 5W
Gate Trigger Current vs.
Junction Temperature
10
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140 160
I
RGT III
3
Typical Example
Gate Voltage (V)
10
1
V
GT
10
0
I
RGT I
V
GD
= 0.1V
I
GM
= 2A
I
FGT I,
I
RGT III
I
FGT I,
I
RGT I
10
–1
10
–2
10
0
10
1
10
2
10
3
10
4
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140 160
1
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
–1
10
3
10
4
Typical Example
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Page 3 of 7
BCR3PM-12LG
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
On-State Power Dissipation (W)
5.0
4.5
4.0
Case Temperature (°C)
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Curves apply regardless
of conduction angle
360° Conduction
3.5
Resistive,
3.0
inductive loads
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Ambient Temperature (°C)
Ambient Temperature (°C)
140
120
100 100 t2.3
120 120 t2.3
140
120
100
80
60
40
20
0
0
0.5
1.0
100
80
60 60 t2.3
60 All fins are black painted
aluminum and greased
40 Curves apply regardless of
conduction angle
20 Resistive, inductive loads
Natural convection
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
7
5
3
2
5
10
7
5
3
2
4
10
7
5
3
2
3
10
7
5
3
2
2
10
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140 160
3
6
Typical Example
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Page 4 of 7
BCR3PM-12LG
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
7
5
3
2
10
1
7
5
3
T +, G+
2
2
– – Typical Example
T
2
, G
10
0
–60 –40–20 0 20 40 60 80 100 120 140 160
2
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Typical Example
Distribution
T
2
+, G–
Typical Example
Latching Current (mA)
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
100
80
60
I Quadrant
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
Tj = 125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
1
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
I Quadrant
III Quadrant
Typical Example
Tj = 150°C
III Quadrant
40
20
0
1
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
7
5
1
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Commutation Characteristics (Tj=150°C)
7
5
3
2
10
7
5
3
2
10
7
0
10
0
1
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
III Quadrant
3
Minimum
Characteristics
2
Value
10
7
0
10
0
III Quadrant
I Quadrant
Minimum
Characteristics
Value
I Quadrant
2 3
5 7 10
1
2 3
5 7 10
2
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Page 5 of 7
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