SDF10N100GAFVGSN datasheet, PDF

SDF10N100GAFVGSN: DescriptionPower Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size158KB，1 Pages; ManufacturerSolitron Devices Inc.

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SDF10N100GAFVGSN Overview

Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	325 ns
Maximum opening time (tons)	210 ns

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