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SDF120JABSGD1N

Description
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size153KB,1 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

SDF120JABSGD1N Overview

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

SDF120JABSGD1N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)9.2 A
Maximum drain current (ID)9.2 A
Maximum drain-source on-resistance0.27 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)37 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)71 ns
Maximum opening time (tons)77 ns
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