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KBU6K

Description
6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size233KB,2 Pages
ManufacturerPFS
Websitehttp://www.ps-pfs.com/ENG/main.asp
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KBU6K Overview

6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MASTER INSTRUMENT CORPORATION
SINGLE-PHASE BRIDGE RECTIFIER
KBU6A THRU KBU6M
FEATURES
l
Low cost
l
This series is UL recognized under component index , file
number E127707
l
High forward surge current capability
l
Ideal for printed circuit board
l
High temperature soldering guaranteed:
260
o
C/10 second, 0.375” (9.5mm) lead length at 5 lbs. (2.3kg)
tension.
MECHANICAL DATA
l
Case: Transfer molded plastic
l
Terminal: Lead solderable per MIL-STD-202E method 208C
l
Polarity: Polarity symbols marked on case
l
Mounting: Thru hole for #6 screw, 5 in.-lbs terque max
l
Weight: 0.27 ounce, 7.59 gram
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
6.0 Amperes
RS-6
0.28(7.1)
0.26(6.6)
0.089(2.3)
0.069(1.7)
0.935(23.7)
0.895(22.7)
0.160(4.1)
0.140(3.6)
0.19(4.8)
0.17(4.3)
0.185(4.7)
0.165(4.2)
X
4 5°
0.24(6.1)
0.22(5.6)
+
0.700(17.8)
0.660(16.8)
0.760(19.3)MAX
AC
-
0.260(6.6)
0.180(4.5)
0.220(5.6)
0.180(4.6)
0.052(1.3)DIA.
0.048(1.2)TYP.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS KBU6A
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Output Current, at
T
C
=100℃ (Note 2)
T
A
=40℃ (Note 3)
I
FSM
I
2
t
V
F
I
R
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
KBU6B
100
70
100
KBU6D
200
140
200
KBU6G
400
280
400
6.0
4.0
250
260
1.0
5.0
1.0
C
J
R
θJC
T
J
, T
STG
200
4.7
-55 to +150
Amps
A
2
s
Volts
µAmps
mAmps
pF
℃/W
KBU6J
600
420
600
KBU6K KBU6M
800
560
800
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage Drop per
bridge element at 6.0A
Maximum DC Reverse Current at rated
DC blocking voltage per element
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
T
A
=25℃
T
A
=100℃
NOTES:
1.
Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.
Unit mounted on 2.6”x1.4”x0.06” thick (6.3x3.5x0.15cm) Al. plate.
3.
Unit mounted in free air, no heatsink, P.C.B at 0.375” (9.5mm) lead length with 0.5”x0.5” (12x12cm) copper pads
Web Site: WWW.PS-PFS.COM
1/2

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Description 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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