K4H280438D-TCA0T datasheet, PDF

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K4H280438D-TCA0T: DescriptionDDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66; Categorystorage storage; File Size426KB，51 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H280438D-TCA0T Overview

DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66

K4H280438D-TCA0T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	TSSOP, TSSOP66,.46
Reach Compliance Code	unknown
Maximum access time	0.8 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	4
Number of terminals	66
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	2,4,8
Maximum standby current	0.0025 A
Maximum slew rate	0.225 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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128Mb D-die(x4/8) DDR SDRAM

DDR SDRAM Specification

Version 0.2

- 1 -

REV. 0.3 Jan.31. 2001

K4H280438D-TCA0T Related Products

	K4H280438D-TCA0T	K4H280438D-TLB3T	K4H280838D-TLB0T	K4H280838D-TCA0T	K4H280438D-TLA0T	K4H280438D-TLB0T	K4H280438D-TLA2T	K4H280838D-TCB0T
Description	DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66	DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66	DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66	DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	0.8 ns	0.7 ns	0.75 ns	0.8 ns	0.8 ns	0.75 ns	0.75 ns	0.75 ns
Maximum clock frequency (fCLK)	100 MHz	166 MHz	133 MHz	100 MHz	100 MHz	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	8	8	4	4	4	8
Number of terminals	66	66	66	66	66	66	66	66
word count	33554432 words	33554432 words	16777216 words	16777216 words	33554432 words	33554432 words	33554432 words	16777216 words
character code	32000000	32000000	16000000	16000000	32000000	32000000	32000000	16000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX4	32MX4	16MX8	16MX8	32MX4	32MX4	32MX4	16MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP
Encapsulate equivalent code	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096
Continuous burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	0.0025 A	0.003 A	0.003 A	0.0025 A	0.0025 A	0.003 A	0.003 A	0.003 A
Maximum slew rate	0.225 mA	0.32 mA	0.3 mA	0.24 mA	0.225 mA	0.29 mA	0.29 mA	0.3 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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