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KM718V887T-7

Description
Cache SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Categorystorage    storage   
File Size438KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

KM718V887T-7 Overview

Cache SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

KM718V887T-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time7.5 ns
Other featuresSELF TIMED WRITE CYCLE; BYTE WRITE
Maximum clock frequency (fCLK)117 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density4718592 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.02 A
Minimum standby current3.14 V
Maximum slew rate0.35 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
KM718V887
Document Title
256Kx18-Bit Synchronous Burst SRAM
256Kx18 Synchronous SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Modify power down cycle timing & Interleaved read timing,
Insert Note 4 at AC timing characteristics.
Change I
SB1
value from 10mA to 30mA.
Change I
SB2
value from 10mA to 20mA.
Change Undershoot spec
from -3.0V(pulse width
20ns) to -2.0V(pulse width
t
CYC
/2)
Add Overshoot spec 4.6V((pulse width
t
CYC
/2)
Change V
IH
max from 5.5V to V
DD
+0.5V
Change I
SB2
value from 20mA to 30mA.
Change V
DD
condition from V
DD
=3.3V+10%/-5% to V
DD
=3.3V+0.3V/-0.165V.
Final spec Release
Add V
DDQ
Supply voltage( 2.5V )
Draft Date
May. 15. 1997
February. 11. 1998
Remark
Preliminary
Preliminary
0.2
April. 14. 1998
Preliminary
0.3
May 13. 1998
Preliminary
1.0
2.0
May 15. 1998
Dec. 02. 1998
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Dec. 1998
Rev. 2.0

KM718V887T-7 Related Products

KM718V887T-7 KM718V887T-9 KM718V887T-8
Description Cache SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Cache SRAM, 256KX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Cache SRAM, 256KX18, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
Is it Rohs certified? incompatible incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG
Parts packaging code QFP QFP QFP
package instruction LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87
Contacts 100 100 100
Reach Compliance Code unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 7.5 ns 9 ns 8 ns
Other features SELF TIMED WRITE CYCLE; BYTE WRITE SELF TIMED WRITE CYCLE; BYTE WRITE SELF TIMED WRITE CYCLE; BYTE WRITE
Maximum clock frequency (fCLK) 117 MHz 83 MHz 100 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 e0 e0
length 20 mm 20 mm 20 mm
memory density 4718592 bit 4718592 bit 4718592 bit
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM
memory width 18 18 18
Number of functions 1 1 1
Number of terminals 100 100 100
word count 262144 words 262144 words 262144 words
character code 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 256KX18 256KX18 256KX18
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP LQFP LQFP
Encapsulate equivalent code QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm 1.6 mm 1.6 mm
Maximum standby current 0.02 A 0.02 A 0.02 A
Minimum standby current 3.14 V 3.14 V 3.14 V
Maximum slew rate 0.35 mA 0.3 mA 0.325 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 14 mm 14 mm 14 mm
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