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K3P4C1000D-TE15

Description
MASK ROM, 512KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
Categorystorage    storage   
File Size64KB,4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K3P4C1000D-TE15 Overview

MASK ROM, 512KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K3P4C1000D-TE15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44,.46,32
Contacts44
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time150 ns
Other featuresALL INPUTS AND OUTPUTS TTL COMPATIBLE
Spare memory width8
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length18.41 mm
memory density8388608 bit
Memory IC TypeMASK ROM
memory width16
Number of functions1
Number of terminals44
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00005 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
K3P4C1000D-TC(E)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
Switchable organization
1,048,576 x 8(byte mode)
524,288 x 16(word mode)
Fast access time
Random Access : 100ns(Max.)
Page Access
: 30ns(Max.)
4 Words / 8 bytes page access
Supply voltage : single +5V
Current consumption
Operating : 80mA(Max.)
Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. K3P4C1000D-TC(E) : 44-TSOP2-400
CMOS MASK ROM
GENERAL DESCRIPTION
The K3P4C1000D-TC(E) is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 1,048,576 x 8 bit(byte mode) or as
524,288 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 4 words (or 8bytes) of data to read fast in the same
page, CE and A
2
~ A
18
should not be changed.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3P4C1000D-TC(E) is packaged in a 44-TSOP2.
FUNCTIONAL BLOCK DIAGRAM
A
18
X
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(524,288x16/
1,048,576x8)
PRODUCT INFORMATION
Product
K3P4C1000D-TC
K3P4C1000D-TE
Operating
Temp Range
0°C~70°C
-20°C~85°C
Vcc Range
(Typical)
5.0V
Speed
(ns)
100
.
.
.
.
.
.
.
.
A
2
PIN CONFIGURATION
Y
BUFFERS
AND
DECODER
SENSE AMP.
DATA OUT
BUFFERS
N.C
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
1
2
3
4
5
6
7
8
44 N.C
43 N.C
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
35 A
15
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
A
0~
A
1
A
-1
CE
OE
BHE
Pin Name
A
0
- A
1
A
2
- A
18
Q
0
- Q
14
Q
15
/A
-1
BHE
CE
OE
V
CC
V
SS
N.C
Pin Function
Page Address Inputs
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power ( +5V)
Ground
No Connection
CONTROL
LOGIC
. . .
Q
0
/Q
8
Q
7
/Q
15
9
A
1
10
A
0
11
CE 12
V
SS
13
OE 14
Q
0
15
Q
8
16
Q
1
17
Q
9
18
Q
2
19
Q
10
20
Q
3
21
Q
11
22
TSOP2
K3P4C1000D-TC(E)
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