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Features
■
RoHS compliant* and halogen free**
■
Surface mount SMC package
■
Standoff voltage: 5 to 170 volts
■
Peak Pulse Power: 5000 watts
■
AEC-Q101 compliant***
■
UL Recognized
Applications
■
Protection of power buses
■
Protection of I/O interfaces
■
Overvoltage transient protection
■
Telecom, computer, industrial and
consumer electronics applications
*R
5.0SMDJ-Q Transient Voltage Suppressor Diode Series
General Information
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection
applications, in compact chip package DO-214AB (SMC) size format. The Transient Voltage
Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V
and Breakdown Voltage up to 189 V. Typical fast response times are less than 1.0 ps from
0 V to Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick
and place equipment and the flat configuration minimizes roll away.
Agency Recognition
Description
UL
File Number:
E153537
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Minimum Peak Pulse Power Dissipation (Tp = 1 ms)
(Note 1,2)
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3,4)
Steady State Power Dissipation @ TL = 50 °C
Maximum Instantaneous Forward Voltage @ I
PP
= 100 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
4.
Symbol
P
PK
I
FSM
P
M(AV)
V
F
T
J
T
STG
Value
5000
300
6.5
5
-55 to +150
-55 to +150
Unit
Watts
Amps
Watts
Volts
°C
°C
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Mounted on 8.0 mm x 8.0 mm copper pad area to each terminal.
How to Order
5.0SMDJ 12 CA - Q
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
Europe:
Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
Package
5.0SMDJ = SMC/DO-214AB
Working Peak Reverse Voltage
12 = 12 VRWM (Volts)
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
AEC-Q101 Compliant Suffix
Q = AEC-Q101 Compliant, 3000 pcs. per 13-inch Reel
QH = AEC-Q101 Compliant, 500 pcs. per 7-inch Reel, 3 Reels per Box
WARNING Cancer and Reproductive Harm -
www.P65Warnings.ca.gov
* RoHS Directive 2015/863, Mar 31, 2015 and Annex.
** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br)
and Chlorine (Cl) content is 1500 ppm or less.
*** Q suffix for automotive and other applications requiring appropriate AEC-Q101 compliance for electronic limiters.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
5.0SMDJ-Q Transient Voltage Suppressor Diode Series
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted) - Continued
Breakdown Voltage
V
BR
(Volts)
Min.
100.00
111.00
122.00
133.00
144.00
167.00
178.00
189.00
Unidirectional Device
Part
Number
5.0SMDJ90A-Q
5.0SMDJ100A-Q
5.0SMDJ110A-Q
5.0SMDJ120A-Q
5.0SMDJ130A-Q
5.0SMDJ150A-Q
5.0SMDJ160A-Q
5.0SMDJ170A-Q
Bidirectional Device
Part
Number
Part
Marking
Reverse
Standoff
Voltage
V
RWM
(V)
90.0
100.0
110.0
120.0
130.0
150.0
160.0
170.0
Maximum
Reverse
Leakage
@ V
RWM
I
R
(μA)
2
2
2
2
2
2
2
2
Maximum
Clamping
Voltage
@ I
PP
V
C
(V)
146.0
162.0
177.0
193.0
209.0
243.0
259.0
275.0
Peak
Pulse
Current
I
PP
(A)
34.3
30.9
28.3
26.0
24.0
20.6
19.3
18.2
Part
Marking
5PGXQ
5PGZQ
5PHEQ
5PHGQ
5PHKQ
5PHMQ
5PHPQ
5PHRQ
Max.
111.00
123.00
135.00
147.00
159.00
185.00
197.00
209.00
@ I
T
(mA)
1
1
1
1
1
1
1
1
Product Dimensions
A
Recommended Footprint
A
B
B
C
C
Dimension
G
CATHODE BAND
(UNIDIRECTIONAL DEVICES ONLY)
A (Max.)
B (Min.)
C (Min.)
SMC (DO-214AB)
4.69
(0.185)
3.07
(0.121)
1.53
(0.060)
MM
(INCHES)
H
F
E
D
DIMENSIONS:
Dimension
A
B
C
D
E
F
G
H
SMC (DO-214AB)
6.60 - 7.11
(0.260 - 0.280)
5.59 - 6.22
(0.220 - 0.245)
2.90 - 3.20
(0.114 - 0.126)
0.15 - 0.31
(0.006 - 0.012)
7.75 - 8.13
(0.305 - 0.320)
0.20
MAX.
(0.008)
2.01 - 2.62
(0.080 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
DIMENSIONS:
MM
(INCHES)
Physical Specifications
Encapsulation .............................Molded plastic per UL Class 94V-0
Polarity....................... Cathode band indicates unidirectional device
No cathode band indicates bidirectional device
Environmental Specifications
Moisture Sensitivity Level ................................................................1
ESD Classification (HBM)............................................................. 3B
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
5.0SMDJ-Q Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
100
Peak Forward Surge Current (Amps)
Peak Pulse Derating in Percent of
Peak Power or Current
Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
0
125
150
175
200
1
2
5
10
20
50
100
Number of Cycles at 60 Hz
300 A at 1 cycle
100 A at 80 cycles
75
50
25
10 x 1000 Waveform as Defined
by R.E.A.
0
0
25
50
75
100
Junction Temperature (°C)
Pulse Waveform
TR=10 µs
100
IP, Peak Pulse Current (%)
Peak value (IRSM)
IRSM
2
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
TA=25 °C
TP
10 x 1000 waveform
as defined by R.E.A.
Typical Junction Capacitance
100000
Bidirectional v=0v
Unidirectional v=0v
CJ - Junction Capacitance (pF)
Half value=
10000
1000
50
Unidirectional
@ VR
Bidirectional
@ VR
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
10
0
0
1.0
2.0
T, Time (ms)
3.0
4.0
1
100
1000
VBR - Reverse Breakdown Voltage (V)
Pulse Rating Curve
1000
Steady State Power Derating Curve
6.5
P
M(AV)
Steady State Power Dissipation (W)
TA = 25 °C
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
200
TL, Lead Temperature (°C)
60 Hz Resistive or
Inductive Load
P PPM - Peak Pulse Power (kW)
100
10
1
0.1
0.1 µs
8.0 x 8.0 mm
(0.31 x 0.31 in.)
Copper Pad Areas
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
t d - Pulse Width (sec.)
Microcontroller MCU
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