CMXT3906LEADFREE datasheet, PDF

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CMXT3906LEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6; CategoryDiscrete semiconductor The transistor; File Size552KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMXT3906LEADFREE Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6

CMXT3906LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	70 ns

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CMXT3906

SURFACE MOUNT

DUAL PNP

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXT3906

type is a dual PNP silicon transistor manufactured

by the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, and designed

for small signal general purpose amplifier and switching

applications.

MARKING CODE: X2A

SOT-26 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

40

5.0

200

350

-65 to +150

357

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

ICEV

VCE=30V, VEB=3.0V

50

BVCBO

IC=10μA

40

BVCEO

IC=1.0mA

40

BVEBO

IE=10μA

5.0

VCE(SAT)

IC=10mA, IB=1.0mA

0.25

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

hie

IC=50mA,

IC=10mA,

IC=50mA,

IB=5.0mA

IB=1.0mA

IB=5.0mA

IC=0.1mA

IC=1.0mA

IC=10mA

0.65

60

80

100

60

30

250

4.5

10

12

0.40

0.85

0.95

UNITS

nA

V

VCE=1.0V,

300

VCE=1.0V, IC=50mA

VCE=1.0V, IC=100mA

VCE=20V, IC=10mA, f=100MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=10V, IC=1.0mA, f=1.0kHz

MHz

pF

kΩ

2.0

R3 (12-February 2010)

CMXT3906LEADFREE Related Products

	CMXT3906LEADFREE	CMXT3906TRLEADFREE
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6	Transistor
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	compliant	compliant
Maximum collector current (IC)	0.2 A	0.2 A
Minimum DC current gain (hFE)	100	100
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	PNP
surface mount	YES	YES
Nominal transition frequency (fT)	250 MHz	250 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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