M464S6453BK0-L1H datasheet, PDF

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M464S6453BK0-L1H: DescriptionSynchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size144KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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M464S6453BK0-L1H Overview

Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144

M464S6453BK0-L1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	4294967296 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.038 A
Maximum slew rate	1.92 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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M464S6453BK0

Revision History

Revision 0.0 (Nov. 2000)

Revision 0.1 (Jan. 2001)

PC100/PC133 512MB SODIMM

• Correted column address information in PIN CONFIGURATION DESCRIPTION.

CA11’is deleted

’

• Defined the input capacitance in CAPACITANCE.

• Redefined the ICC* in DC CHARACTERISTICS.

Revision 0.2 (Feb. 2001)

• Reduced the value of ICC6 for low power 32mA to 24mA

Revision 0.3 (Mar. 2001)

• Redifined the value of Input Capacitance

Revision 0.4 (Jun 2001)

• defined a new product of "-7A"

Rev. 0.4 Jun 2001

M464S6453BK0-L1H Related Products

	M464S6453BK0-L1H	M464S6453BK0-L7A	M464S6453BK0-C1H	M464S6453BK0-L1L	M464S6453BK0-C75	M464S6453BK0-L75	M464S6453BK0-C1L	M464S6453BK0-C7A
Description	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	5.4 ns	6 ns	6 ns	5.4 ns	5.4 ns	6 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	133 MHz	100 MHz	100 MHz	133 MHz	133 MHz	100 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144	144	144
word count	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000	64000000	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES	YES
Maximum standby current	0.038 A	0.038 A	0.038 A	0.038 A	0.038 A	0.038 A	0.038 A	0.038 A
Maximum slew rate	1.92 mA	2 mA	1.92 mA	1.92 mA	2 mA	2 mA	1.92 mA	2 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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