PBSS4041SN,118 datasheet, PDF - EEWORLD Datasheet

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PBSS4041SN,118: DescriptionTRANSISTOR 6700 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SOP-8, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size370KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PBSS4041SN,118 Overview

TRANSISTOR 6700 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SOP-8, BIP General Purpose Small Signal

PBSS4041SN,118 Parametric

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	6.7 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	75
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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PBSS4041SN

60 V, 6.7 A NPN/NPN low V

CEsat

(BISS) transistor

Rev. 2 — 18 October 2010

Product data sheet

1. Product profile

1.1 General description

NPN/NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)

medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Product overview

Package

NXP

PBSS4041SN

SOT96-1

Name

SO8

PNP/PNP

complement

PBSS4041SP

NPN/PNP

complement

PBSS4041SPN

Type number

1.2 Features and benefits

Very low collector-emitter saturation voltage V

CEsat

High collector current capability I

and I

High collector current gain (h

) at high I

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 2.

CEO

CEsat

[1]

Quick reference data

Conditions

open base

single pulse;

≤

1 ms

= 4 A; I

= 0.2 A

[1]

Symbol Parameter

collector-emitter voltage

collector current

peak collector current

collector-emitter

saturation resistance

Min

Typ

Max

6.7

Unit

mΩ

Pulse test: t

≤

300

μs; δ ≤

0.02.

PBSS4041SN,118 Related Products

	PBSS4041SN,118	934063412115
Description	TRANSISTOR 6700 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SOP-8, BIP General Purpose Small Signal	6700mA, 60V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SOP-8
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	6.7 A	6.7 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	75	75
JESD-30 code	R-PDSO-G8	R-PDSO-G8
Number of components	2	2
Number of terminals	8	8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz

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