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Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMS9012
Features
•
•
•
•
•
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SOT-23 Plastic-Encapsulate Transistors
Capable of 0.3Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking Code: J3Y
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
D
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
G
F
E
C
B
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
40
---
---
---
350
---
0.6
1.2
1.4
---
---
Vdc
Vdc
Vdc
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
.035
.900
.079
2.000
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
inches
mm
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