MMS9012H datasheet, PDF - EEWORLD Datasheet

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MMS9012H: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size42KB，1 Pages; ManufacturerShanghai Lunsure Electronic Technology Co., Ltd.

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MMS9012H Overview

Transistor

MMS9012H Parametric

Parameter Name	Attribute value
Maker	Shanghai Lunsure Electronic Technology Co., Ltd.
package instruction	,
Reach Compliance Code	unknown

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Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

MMS9012

Features

•

SOT-23 Plastic-Encapsulate Transistors

Capable of 0.3Watts(Tamb=25

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

C to +150

Marking Code: J3Y

PNP Silicon

Plastic-Encapsulate

Transistor

SOT-23

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

=100uAdc, I

=0)

Collector-Emitter Breakdown Voltage

=0.1mAdc, I

=0)

Emitter-Base Breakdown Voltage

=100uAdc, I

=0)

Collector Cutoff Current

=40Vdc, I

=0)

Collector Cutoff Current

=20Vdc, I

=0)

Emitter Cutoff Current

=5.0Vdc, I

=0)

DC Current Gain

=50mAdc, V

=1.0Vdc)

DC Current Gain

=500mAdc, V

=1.0Vdc)

Collector-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base- Emitter Voltage

=100mAdc)

Transistor Frequency

=20mAdc, V

=6.0Vdc, f=30MHz)

Min

5.0

---

Max

---

0.1

Units

OFF CHARACTERISTICS

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

Vdc

uAdc

DIM

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

ON CHARACTERISTICS

FE(1)

FE(2)

CE(sat)

BE(sat)

120

---

350

---

0.6

1.2

1.4

---

Vdc

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

SMALL-SIGNAL CHARACTERISTICS

150

---

MHz

.035

.900

.079

2.000

CLASSIFICATION OF H

FE (1)

Rank

Range

120-200

200-350

.037

.950

.037

.950

inches

www.cnelectr.com

MMS9012H Related Products

	MMS9012H	MMS9012
Description	Transistor	Transistor
Maker	Shanghai Lunsure Electronic Technology Co., Ltd.	Shanghai Lunsure Electronic Technology Co., Ltd.
Reach Compliance Code	unknown	unknown

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