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MMBTA06

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size118KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
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Small Signal Bipolar Transistor,

MMBTA06 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BL
Galaxy Electrical
NPN General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary PNP type available
(MMBTA55/MMBTA56).
Also available in lead free version.
Production specification
MMBTA05/MMBTA06
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBTA05
MMBTA06
Marking
1H
1GM
Package Code
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
,T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
Thermal Resistance, Junction to Ambient
junction and storage temperature
MMBTA05
MMBTA06
MMBTA05
MMBTA06
Value
60
80
60
80
4
0.5
0.35
357
-55-150
UNIT
V
V
V
A
W
°C/W
°C
Document number: BL/SSSTC119
Rev.A
www.galaxycn.com
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