MMBD7000 datasheet, PDF - EEWORLD Datasheet

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MMBD7000: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size168KB，3 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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MMBD7000 Overview

Rectifier Diode,

MMBD7000 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
package instruction	R-PDSO-G3
Reach Compliance Code	unknown
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.33 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.015 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

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Galaxy Electrical

Surface mount switching diode

FEATURES

For high-speed switching appilication.

Connected in series.

Production specification

MMBD7000

Lead-free

APPLICATIONS

High speed switching application.

ORDERING INFORMATION

Type No.

MMBD7000

Marking

M5C

SOT-23

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

DC Reverse Voltage

Forward Current

Suge forward Current,

Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

t=1μs

Symbol

STG

Limits

100

200

4.5

330

150

-65 to +150

Unit

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Symbol

(BR)R

Min

100

0.55

0.67

0.75

0.7

0.82

1.1

300

500

MAX

UNIT

Test Condition

= 100μA

=1mA

=10mA

=100mA

=50V

=100V

=0V,f=1MHz

=10mA

=100Ω

Reverse Leakage Current

Diode Capacitance

Reverse Recovery Time

Document number: BL/SSSDC069

Rev.A

www.galaxycn.com

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