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SMX0511MR-M1

Description
Pin Diode, 500V V(BR), Silicon, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, M1, MELF-2
CategoryDiscrete semiconductor    diode   
File Size167KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

SMX0511MR-M1 Overview

Pin Diode, 500V V(BR), Silicon, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, M1, MELF-2

SMX0511MR-M1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeMELF
package instructionR-CDSO-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW DISTORTION
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage500 V
ConfigurationSINGLE
Maximum diode capacitance1.25 pF
Nominal diode capacitance1.25 pF
Diode component materialsSILICON
Maximum diode forward resistance0.3 Ω
Diode resistance test current100 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandHIGH FREQUENCY TO L BAND
JESD-30 codeR-CDSO-R2
Minority carrier nominal lifetime3 µs
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Reverse test voltage50 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formWRAP AROUND
Terminal locationDUAL
SM0502 – SM1003
TM
®
CONTROL DEVICES
Surface Mount – MELF PIN Diodes
RoHS Compliant Versions
DESCRIPTION
This line of ‘MELF’ high power PIN diodes are hermetically sealed
surface mount packaged devices with full face bonded chips for low
inductance construction. The MELF ceramic package has square end
terminations which are ideal for surface mount and pick and place
operations. The PIN diode chips are coated with a special hard glass
passivation which is required for high power applications and to
enhance the reliability resulting in MTBFs of greater than one million
hours.
RoHS compliant versions of these products meet RoHS requirements per EU
Directive 2002/95/EC. The standard terminal finish is gold unless otherwise
specified. Consult the factory if you have special requirements.
KEY FEATURES
Non-Magnetic
1
Versions Ideal for
MRI Applications
Very Low Inductance, Full Face
Bonding
Hi-Rel Hermetic Design
Surface Mount Devices Available
in Tape and Reel
2
RoHS Compliant Versions
www.MICROSEMI.com
Available
APPLICATIONS
The MELF diodes are used as switching, attenuating and phase
shifting elements from HF through 2 GHz and have breakdown
voltage ratings up to 500 volts. ‘Non-magnetic
1
’ .Cer-Met. (MELFs)
are also used as switching elements in MRI (magnetic resonance
imaging). Conventional Magnetic MELF packages are used in
Cellular, Beam Steering units (telephone via satellites) surface mount
applications, and Filter Switch banks for Frequency Hopping Radios.
APPLICATIONS/BENEFITS
Designed for Low Loss – Low
Distortion Applications
Switch – Filter Bank
T/R Control
Attenuators
MRI Switching
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of Minimum Rated V
B
Forward Current (1us Pulse)
Storage Temperature
Operating Temperature
Symbol
I
R
I
F
T
STG
T
OP
Value
500
1
-55 to +150
-55 to +150
Unit
nA
A
SM0502 – SM1003
ºC
ºC
IMPORTANT:
For the most current data, consult our website
:
www.MICROSEMI.com
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
1‘
Non Magnetic’ refers to any products that
are designed with low and ultra low
magnetic materials for use in MRI systems
RoHS versions are supplied with a matte
tin finish.
2
.
Copyright
2007
Rev: 2009-02-25
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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