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2N6213

Description
Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size217KB,5 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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2N6213 Overview

Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin

2N6213 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-based maximum capacity220 pF
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-213AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment35 W
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Maximum off time (toff)3100 ns
VCEsat-Max2 V
Base Number Matches1

2N6213 Related Products

2N6213 2N6214
Description Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-213AA, Metal, 2 Pin
Is it Rohs certified? incompatible incompatible
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow unknow
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A
Collector-based maximum capacity 220 pF 220 pF
Collector-emitter maximum voltage 350 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JEDEC-95 code TO-213AA TO-213AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 35 W 35 W
Maximum power dissipation(Abs) 20 W 20 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz
Maximum off time (toff) 3100 ns 3100 ns
VCEsat-Max 2 V 2.5 V
Base Number Matches 1 1
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笑溜溜 PCB Design

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