BUX84S datasheet, PDF - EEWORLD Datasheet

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BUX84S: DescriptionTRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size26KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUX84S Overview

TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

BUX84S Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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Philips Semiconductors

Product specification

NPN high voltage

Power transistor

FEATURES

• Fast switching

• Excellent thermal stability

• High thermal cycling performance

• Low thermal resistance

• Surface mounting package

BUX84S

SYMBOL

QUICK REFERENCE DATA

CESM

= 800 V

CEO

= 400 V

= 2 A

CE(SAT)

≤

1 V (I

= 1 A)

= 0.4

µs

(typ)

GENERAL DESCRIPTION

High voltage, high speed glass

passivated NPN power transistor in

a plastic package.

Applications:-

Off-line SMPS

TV and monitor power supplies

Inverters

Electronic lighting ballasts

The BUX84S is supplied in the

SOT428 (DPAK) surface mounting

package.

PINNING

base

collector

emitter

DESCRIPTION

SOT428

tab

collector (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CESM

CEO

EBO

-I

tot

, T

stg

Collector-emitter voltage

(peak value)

Collector-emitter voltage

(DC)

Emitter-base voltage

Collector current (DC)

Collector current (peak

value)

Base current (DC)

Base current (peak value)

Reverse base current (peak

value during turn-off)

Total power dissipation

Operating junction and

storage temperature

CONDITIONS

= 0 V

base open circuit

collector open circuit

= 2 ms

MIN.

= 25 ˚C

- 65

MAX.

800

400

0.75

150

UNIT

˚C

It is not possible to make connection to pin:2 of the SOT428 package.

February 1999

Rev 1.000

Philips Semiconductors

Product specification

NPN high voltage

Power transistor

MOUNTING INSTRUCTIONS

Dimensions in mm

7.0

BUX84S

7.0

2.15

2.5

1.5

4.57

Fig.2. SOT428 : soldering pattern for surface mounting.

DEFINITIONS

Data sheet status

Objective specification

Product specification

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

This data sheet contains target or goal specifications for product development.

This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

February 1999

Rev 1.000

BUX84S Related Products

	BUX84S	BUX84S/T3
Description	TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 2 A, 400 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	400 V	400 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz

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