BSS169
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead-plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
DSS,min
100
12
0.09
V
Ω
A
PG-SOT-23
Type
BSS169
BSS169
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
Marking
SFs
SFs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.17 A,
V
DS
=80 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.17
0.14
0.68
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
Class 0
V
P
tot
T
j
,
T
stg
T
A
=25 °C
0.36
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.6
page 1
2007-01-18
BSS169
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
-
-
350
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=-10 V,
I
D
=250 µA
V
GS(th)
I
D(off)
V
DS
=3 V,
I
D
=50 µA
V
DS
=100 V,
V
GS
=-10 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=-10 V,
T
j
=125 °C
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
I
GSS
I
DSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
V
GS
=0 V,
I
D
=0.05 A
V
GS
=10 V,
I
D
=0.17 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.14 A
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
100
-2.9
-
-
-2.2
-
-
-1.8
0.1
V
µA
-
-
90
-
-
0.10
-
-
-
5.3
2.9
0.19
10
10
-
12
6
-
S
nA
mA
Ω
Threshold voltage
V
GS(th)
sorted in bands
2)
J
K
L
M
N
2)
V
GS(th)
V
DS
=3 V,
I
D
=50 µA
-2
-2.15
-2.3
-2.45
-2.6
-
-
-
-
-
-1.8
-1.95
-2.1
-2.25
-2.4
V
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.6
page 2
2007-01-18
BSS169
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=-10 V,
I
F
=0.17 A,
T
j
=25 °C
V
R
=50 V,
I
F
=0.12 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.79
20.5
9.7
0.17
0.68
1.2
25.6
12.1
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=80 V,
I
D
=0.12 A,
V
GS
=-3 to 7 V
-
-
-
-
0.12
0.9
2.1
-0.43
0.16
1.4
2.8
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=-3…7 V,
I
D
=0.12 A,
R
G
=6
Ω
V
GS
=-10 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
51
9
4
2.9
2.7
11
27
68
13
7
4.2
4.0
17
40
ns
pF
Values
typ.
max.
Unit
Rev. 1.6
page 3
2007-01-18
BSS169
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.4
0.2
0.16
0.3
0.12
P
tot
[W]
0.2
I
D
[A]
0.08
0.04
0
0
40
80
120
160
0
40
80
120
160
0.1
0
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
limited by on-state
resistance
10
0
100 µs
0.5
10 µs
10
2
0.2
0.1
0.05
0.02
10
-1
10 ms
Z
thJA
[K/W]
10
1
1 ms
I
D
[A]
0.01
single pulse
10
-2
DC
10
-3
10
0
10
1
10
2
10
3
10
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 1.6
page 4
2007-01-18
BSS169
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.5
14
V1
V 10
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
-0.2 V
0V
0.2 V
0.5 V
-0.1 V 0.1 V
0.4
V 0.5
12
10
V 0.2
V 0.1
V0
R
DS(on)
[
Ω
]
0.3
I
D
[A]
8
0.2
V 0.1-
V 0.2-
6
1V
4
0.1
2
10 V
0
0
2
4
6
8
10
0
0
0.1
0.2
0.3
0.4
0.5
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.5
0.4
0.35
0.4
0.3
0.3
0.25
g
fs
[S]
0.2
0.1
0
-2
-1
0
1
2
I
D
[A]
0.2
0.15
0.1
0.05
0
0.00
0.10
0.20
0.30
0.40
0.50
V
GS
[V]
I
D
[A]
Rev. 1.6
page 5
2007-01-18
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