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BDP956-E6433

Description
Small Signal Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size125KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BDP956-E6433 Overview

Small Signal Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon

BDP956-E6433 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.8 V
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