PROFET® Data sheet BTS 6144B/P
Smart Highside Power Switch
•
Reverse battery protection by self turn on of
power MOSFET
Reversave
Features
•
Short circuit protection with latch
•
Current limitation
•
Overload protection
•
Thermal shutdown with restart
•
Overvoltage protection (including load dump)
•
Loss of ground protection
•
Loss of
V
bb
protection (with external diode for
charged inductive loads)
•
Very low standby current
•
Fast demagnetization of inductive loads
•
Electrostatic discharge
(ESD) protection
•
Optimized static
electromagnetic compatibility
(EMC)
Product Summary
Operating voltage
On-state resistance
Nominal current
Load current (ISO)
Current limitation
Package
TO 220-7-180
V
bb(on)
R
ON
I
L(nom)
I
L(ISO)
I
L12(SC)
5.5 ... 38
V
9
mΩ
9.5
A
37.5
A
90
A
TO 220-7-230
7
1
S M D
Diagnostic Function
•
Proportional load current sense (with defined fault
signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown)
Application
•
Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
R
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
bb
+ V bb
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
1, 2, 6, 7
I
L
Current
Sense
Load
3
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
5
R
IS
Infineon Technologies AG
Page 1 of 16
2003-Oct-01
Data sheet BTS 6144B/P
Pin
1; 2
3
4; Tab
5
Symbol
OUT
IN
Vbb
IS
O
I
+
S
Function
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted* .
Input;
activates the power switch if shorted to ground.
Supply Voltage;
positive power supply voltage; tab and pin4 are internally
shorted.
Sense Output;
Diagnostic feedback; provides at normal operation a sense
current proportional to the load current; in case of overload,
overtemperature and/or short circuit a defined current is provided (see
Truth Table on page 8)
Output;
output to the load; pin 1, 2, 6 and 7 must be externally shorted* .
6; 7
OUT
O
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
1)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
= 2
Ω,
R
L
= 1Ω,
t
d
= 400 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation m
3)
single pulse,
I
L
= 20 A,
V
bb
= 12V
T
j
=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
acc.
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 9
Symbol
V
bb
V
bb
V
Load dump2
)
I
L
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
Values
38
30
45
self-limited
-40 ...+150
-55 ...+150
81
0.4
3.0
+15, -120
+15, -120
Unit
V
V
V
A
°C
W
J
kV
mA
Input voltage slew rate
V
bb
≤
16V : dV
bIN
/ dt
V
bb
> 16V
4)
:
self-limited
20
V/µs
1)
2)
3)
4)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on
page11.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
See also diagram on page 11.
See also on page 8. Slew rate limitation can be achieved by means of using a series resistor
R
IN
in the input
path. This resistor is also required for reverse operation. See also page 10.
Infineon Technologies AG
Page 2 of 16
2003-Oct-01
Data sheet BTS 6144B/P
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case
:
R
thJC 5
)
junction - ambient (free air):
R
thJA
SMD version, device on PCB
6
):
Values
typ
max
0.7
0.8
60
--
33
40
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,2,6,7)
V
IN
= 0,
V
bb
= 5.5V,
I
L
= 10 A
V
IN
= 0,
V
bb
= 12V,
I
L
= 10 A
T
j
=25 °C:
R
ON
T
j
=150 °C:
--
--
--
--
--
9.5
17
7
13
30
13
22
9
16
60
mΩ
T
j
=25 °C:
T
j
=150 °C:
Output voltage drop limitation at small load
currents (Tab to pin 1,2,6,7)
T
j
=-40...150 °C:
Nominal load current (Tab to pin 1,5)
ISO Proposal:
V
ON
≤
0.5 V,
T
C
= 85°C,
T
j
≤
150°C
SMD
6)
,
V
ON
≤
0.5 V,
T
A
= 85°C,
T
j
≤
150°C
Turn-on time
to 90%
V
OUT
:
Turn-off time
to 10%
V
OUT
:
R
L
= 2.2
Ω,
T
j
=-40...150 °C
Slew rate on
25 to 50%
V
OUT
,
R
L
= 2.2
Ω,
T
j
=-40...150 °C
Slew rate off
50 to 25%
V
OUT
,
R
L
= 2.2
Ω,
T
j
=-40...150 °C
V
ON(NL)
mV
I
L(ISO)
I
L(nom)
t
on
t
off
dV /dt
on
-dV/dt
off
37.5
9.5
--
--
--
--
48
12
300
300
0.2
0.2
--
--
550
600
0.35
0.45
A
µs
V/µs
V/µs
5)
6
)
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3 of 16
2003-Oct-01
Data sheet BTS 6144B/P
Parameter and Conditions
at
T
j
= 25,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Operating Parameters
Operating voltage (V
IN
=0)
T
j
=-40...150 °C:
Undervoltage shutdown
7
)
8
)
Undervoltage restart of charge pump
Overvoltage protection
9
)
I
bb
=15 mA
T
j
=-40...+150°C
:
Standby current
T
j
=-40...+120°C
:
I
IN
=0
T
j
=150°C:
Reverse Battery
Reverse battery voltage
10)
On-state resistance (pin 4, Tab to pin 1,2,6,7)
V
bb(on)
V
bIN(u)
V
bb(ucp)
V
Z,IN
I
bb(off)
5.5
--
--
63
--
--
--
2.5
4
67
3
6
38
3.5
5.5
--
6
14
V
V
V
V
µA
-V
bb
--
--
16
V
V
bb
= - 8V,
V
IN
= 0,
I
L
= -10 A,
R
IS
= 1 kΩ,
8)
T
j
=25 °C:
R
ON(rev)
T
j
=150 °C:
V
bb
= -12V,
V
IN
= 0,
I
L
= -10 A,
R
IS
= 1 kΩ,
T
j
=25 °C:
T
j
=150 °C:
Integrated resistor in
V
bb
line
R
bb
--
--
--
--
--
8.5
13
8
13
100
12
18
11
19
150
mΩ
Ω
Inverse Operation
11)
Output voltage drop (pin 4, Tab to pin 1,2,6,7)
8)
I
L
= -10 A,
R
IS
= 1 kΩ,
T
j
=25 °C:
-V
ON(inv)
T
j
=150 °C:
I
L
= -10 A,
R
IS
= 1 kΩ,
Turn-on delay after inverse operation;
I
L
> 0A
8)
V
IN
(inv) =
V
IN
(fwd) = 0 V
t
d(inv)
--
--
--
700
300
1
--
--
--
mV
ms
7)
V
bIN
=V
bb
-V
IN
see diagram page 14.
8)
not subject to production test, specified by design
9)
See also
V
ON(CL)
in circuit diagram page 9.
10)
For operation at voltages higher then |16V| please see required schematic on page 10.
11)
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS.
In this case the device switches on with a time delay t
d(inv)
)
after the transition from inverse to forward mode.
Infineon Technologies AG
Page 4 of 16
2003-Oct-01
Data sheet BTS 6144B/P
Parameter and Conditions
at
T
j
= 25,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
12
)
Short circuit current limit (pin 4, Tab to
pin 1,2,6,7)
13
)
Short circuit current limit at
V
ON
= 6V
14)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 12V
T
j
=-40°C:
t
m
=170µs
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 18V
14
)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 24V
T
j
=-40°C:
t
m
=170µs
T
j
=25°C:
T
j
=+150°C:
Short circuit current limit at
V
ON
= 36V
14)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Short circuit shutdown detection voltage
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC),
T
j
= -40...+150°C
min. value valid only if input "off-signal" time exceeds 30
µs
I
L6(SC)
I
L12(SC)
I
L18(SC)
I
L24(SC)
I
L36(SC)
V
ON(SC)
t
d(SC1)
--
--
90
--
--
55
--
--
45
--
--
28
--
--
15
2.5
350
140
130
120
105
95
85
75
70
65
47
46
45
27
27
27
3.5
650
170
--
--
130
--
--
100
--
--
70
--
--
40
--
--
4.5
1200
A
A
A
A
A
V
µs
µs
V
°C
K
Short circuit shutdown delay during on condition
14)
V
ON
>
V
ON(SC)
Output clamp (inductive load switch off)
15
)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Thermal overload trip temperature
Thermal hysteresis
t
d(SC2)
V
ON(CL)
T
jt
∆
T
jt
--
39
150
--
2
42
175
10
--
--
--
--
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
13
) Short circuit current limit for max. duration of t
d(SC1)
, prior to shutdown, see also figures 3.x on page 13.
14
) not subject to production test, specified by design
15
) See also figure 2b on page 12.
12)
Infineon Technologies AG
Page 5 of 16
2003-Oct-01
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