BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Note:
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use B suffix (e.g.
BZW04P-6V4B).
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs
waveform
(1)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next table
1.5
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for BZW04P(-)188 and below; V
F
= 5.0 V for BZW04P(-)213 and above
Document Number: 88316
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM MAXIMUM MAXIMUM
MAXIMUM
STAND- REVERSE
VOLTAGE
PEAK
CLAMPING TEMPERATURE
TEST
PART NUMBER
OFF
LEAKAGE
PULSE
VOLTAGE
V
BR
AT I
T (1)
CURRENT
COEFFICIENT
VOLTAGE AT V
CURRENT
AT I
PPM
I
T
(mA)
OF
WM
(V)
V
WM
(V)
(2)
(4)
(µA) I
V
BR
(%/°C)
V
C
(V)
(A)
I
D
PPM
UNI-DIRECTIONAL BI-DIRECTIONAL MIN. MAX.
BZW04P70
BZW04P70B
77.9
90.2
1.0
70.1
1.0
3.5
113
0.105
BZW04-70
BZW04-70B
77.9
86.1
1.0
70.1
1.0
3.5
113
0.105
BZW04P78
BZW04P78B
86.5
100
1.0
78.0
1.0
3.2
125
0.105
BZW04-78
BZW04-78B
86.5
95.5
1.0
78.0
1.0
3.2
125
0.105
BZW04P85
BZW04P85B
95.0
110
1.0
85.5
1.0
2.9
137
0.106
BZW04-85
BZW04-85B
95.0
105
1.0
85.5
1.0
2.9
137
0.106
BZW04P94
BZW04P94B
105
121
1.0
94.0
1.0
2.6
152
0.107
BZW04-94
BZW04-94B
105
116
1.0
94.0
1.0
2.6
152
0.107
BZW04P102
BZW04P102B
114
132
1.0
102
1.0
2.4
165
0.107
BZW04-102
BZW04-102B
114
126
1.0
102
1.0
2.4
165
0.107
BZW04P110
BZW04P110B
124
143
1.0
111
1.0
2.2
179
0.107
BZW04-110
BZW04-110B
124
137
1.0
111
1.0
2.2
179
0.107
BZW04P128
BZW04P128B
143
165
1.0
128
1.0
2.0
207
0.108
BZW04-128
BZW04-128B
143
158
1.0
128
1.0
2.0
207
0.108
BZW04P136
BZW04P136B
152
176
1.0
136
1.0
1.8
219
0.108
BZW404-136
BZW404-136B
152
168
1.0
136
1.0
1.8
219
0.108
BZW04P145
BZW04P145B
161
187
1.0
145
1.0
1.7
234
0.108
BZW04-145
BZW04-145B
161
179
1.0
145
1.0
1.7
234
0.108
BZW04P154
BZW04P154B
171
198
1.0
154
1.0
1.6
246
0.108
BZW04-154
BZW04-154B
171
189
1.0
154
1.0
1.6
246
0.108
BZW04P171
BZW04P171B
190
220
1.0
171
1.0
1.5
274
0.108
BZW04-171
BZW04-171B
190
210
1.0
171
1.0
1.5
274
0.108
BZW04P188
BZW04P188B
209
242
1.0
188
1.0
1.4
301
0.108
BZW04-188
BZW04-188B
209
231
1.0
188
1.0
1.4
301
0.108
BZW04P213
BZW04P213B
237
275
1.0
213
1.0
1.2
344
0.110
BZW04-213
BZW04-213B
237
263
1.0
213
1.0
1.2
344
0.110
BZW04P239
BZW04P239B
266
308
1.0
239
1.0
1.1
384
0.110
BZW04-239
BZW04-239B
266
294
1.0
239
1.0
1.1
384
0.110
BZW04P256
BZW04P256B
285
330
1.0
256
1.0
1.0
414
0.110
BZW04-256
BZW04-256B
285
315
1.0
256
1.0
1.0
414
0.110
BZW04P273
BZW04P273B
304
352
1.0
273
1.0
0.90
438
0.110
BZW04-273
BZW04-273B
304
336
1.0
273
1.0
0.90
438
0.110
BZW04P299
BZW04P299B
332
385
1.0
299
1.0
0.80
482
0.110
BZW04-299
BZW04-299B
332
368
1.0
299
1.0
0.80
482
0.110
BZW04P342
BZW04P342B
380
440
1.0
342
1.0
0.75
548
0.110
BZW04-342
BZW04-342B
380
420
1.0
342
1.0
0.75
548
0.110
BZW04P376
BZW04P376B
418
484
1.0
376
1.0
0.67
603
0.110
BZW04-376
BZW04-376B
418
462
1.0
376
1.0
0.67
603
0.110
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
ORDERING INFORMATION
(Example)
PREFERRED P/N
BZW04P10-E3/54
BZW04P10HE3/54
(1)
UNIT WEIGHT (g)
0.350
0.350
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
5500
5500
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
Document Number: 88316
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Measured at
Zero Bias
P
PPM
- Peak Pulse Power (kW)
1
C
J
- Junction Capacitance (pF)
100
Measured at Stand-Off
Voltage V
WM
10
0.1
0.1
1
10
100
1000
10 000
1
10
100
1000
t
d
- Pulse
Width
(µs)
V
BR
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
60 Hz
Resistive or
Inductive Load
75
75
P
D
- Power Dissipation (%)
50
50
L = 0.375" (9.5 mm)
Lead Lengths
25
25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Power Derating Curve
150
t
r
= 10
µs
Peak
Value
I
PPM
I
PPM
- Peak Pulse Current,
%
I
RSM
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
Peak Forward Surge Current (A)
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
Decays to 50
%
of I
PPM
100
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
10
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88316
Revision: 22-Oct-08