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2SC1050

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size115KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC1050 Overview

Transistor

2SC1050 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1050
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・For
use in audio and general
purpose applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
固电
IN
导½
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
T
mb
=25℃
OR
UCT
ND
O
VALUE
300
300
6
1
40
150
-55~150
UNIT
V
V
V
A
W
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