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BZD27-C5V1

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size113KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric View All

BZD27-C5V1 Overview

Zener Diode,

BZD27-C5V1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
Certificate TH97/10561QM
Certificate TW00/17276EM
BZD27 Series
FEATURES :
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Zener working voltage range: 3.6 to 270 V for 46 types
* Transient suppressor stand-off voltage range:
6.2 to 430 V for 45 types
VOLTAGE REGULATOR DIODES
MELF (Plastic)
Cathode Mark
φ
0.102 (2.6)
0.094 (2.4)
0.022(0.55)
0.205(5.2)
0.189(4.8)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Terminals : Plated Terminals, solderable per
MIL-STD-750 Method 2026
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.116 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Parameter
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Total Power dissipation
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Non-repetitive peak reverse
power dissipation
Non-repetitive peak reverse power
dissipation (BZD27-C7V5 to -C510)
Forward voltage
Junction and Storage Temperature Range
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
T
J
, T
STG
-65
-65
+200
+175
°C
P
ZSM
P
RSM
V
F
P
tot
PCB mounted
Tamb = 60 °C, see Fig. 1
Tamb = 55 °C, see Fig. 2
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 5
10/1000 µs exponential pulse (see Fig. 5)
Tj = 25°C prior to surge
I
F
= 0.2 A; Tj = 25 °C; see Fig. 3
-
-
-
-
-
0.8
0.8
300
150
1.2
W
W
V
W
P
tot
Symbol
Condition
Ttp = 105 °C; see Fog. 1 and 2
Min.
-
-
Max.
1.7
2.3
Unit
W
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Thermal resistance from junction to ambient
BZD27-C3V6 to BZD27-C6V8
BZD27-C7V5 to BZD27-C510
Note :
(1) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40 µm on an must space.
Symbol
R
th j-tp
Condition
Value
55
30
Unit
K/W
R
th j-a
Note 1
175
150
K/W
Page 1 of 4
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