Important notice
Dear Customer,
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
PNP medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT23 plastic
package.
1
BF824
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
MARKING
TYPE NUMBER
BF824
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF824
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING
CODE
(1)
Top view
2
1
2
MAM256
F8∗
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
=
−4
mA; V
CE
=
−10
V
I
C
= 0; V
CE
=
−10
V; f = 1 MHz
V
CE
=
−10
V; f = 100 MHz
I
C
=
−1
mA
I
C
=
−4
mA
I
C
=
−8
mA
250
400
390
350
450
440
−
−
−
−
−
25
25
−
−
MIN.
TYP.
−
−
45
50
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−30
−30
−4
−25
−25
250
+150
150
+150
BF824
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
K/W
MAX.
−50
−100
−
−
−900
0.3
UNIT
nA
nA
mV
pF
MHz
MHz
MHz
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP medium frequency transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BF824
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
4
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