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BSP225TRL

Description
TRANSISTOR 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size65KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSP225TRL Overview

TRANSISTOR 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

BSP225TRL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)0.225 A
Maximum drain-source on-resistance15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP225
P-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995

BSP225TRL Related Products

BSP225TRL BSP225 T/R BSP225TRL13
Description TRANSISTOR 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal mosfet small signal P-CH dmos 250v 225ma TRANSISTOR 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker NXP - NXP
Reach Compliance Code unknown - unknown
ECCN code EAR99 - EAR99
Other features LOGIC LEVEL COMPATIBLE - LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V - 250 V
Maximum drain current (ID) 0.225 A - 0.225 A
Maximum drain-source on-resistance 15 Ω - 15 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 15 pF - 15 pF
JESD-30 code R-PDSO-G4 - R-PDSO-G4
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 4 - 4
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type P-CHANNEL - P-CHANNEL
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface TIN - TIN
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 40 - 40
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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