TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-218AC
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 6 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W |
| surface mount | NO |