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BUZ355

Description
Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size154KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ355 Overview

Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

BUZ355 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
Factory Lead Time1 week
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)720 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)21 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUZ 355
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
800 V
I
D
6A
R
DS(on
)
1.5
Package
Ordering Code
BUZ 355
TO-218 AA
C67078-S3107-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 29 °C
I
D
A
6
Pulsed drain current
T
C
= 25 °C
I
Dpuls
24
I
AR
E
AR
E
AS
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 6 A,
V
DD
= 50 V,
R
GS
= 25
L
= 37.5 mH,
T
j
= 25 °C
5.1
15
mJ
720
V
GS
P
tot
Gate source voltage
Power dissipation
T
C
= 25 °C
±
20
125
V
W
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
°C
1
75
E
55 / 150 / 56
K/W
Semiconductor Group
1
07/96
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