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BSP296L6433HTMA1

Description
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size300KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSP296L6433HTMA1 Overview

Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP296L6433HTMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1.1 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)4.4 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Rev. 2.1
BSP296
SIPMOS
Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
100
0.7
1.1
PG-SOT223
4
V
A
R
DS(on)
I
D
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
3
2
1
VPS05163
Type
BSP296
BSP296
Package
PG-SOT223
PG-SOT223
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
Marking
BSP296
BSP296
Packaging
Non dry
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
1.1
0.88
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
4.4
6
±20
1B (>500V, <1000V)
1.79
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=1.1A,
V
DS
=80V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD (JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
Page 1
2009-08-18
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