Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-5 |
| package instruction | TO-5, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-5 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 1 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| Base Number Matches | 1 |

| 2N5333 | 2N5322 | |
|---|---|---|
| Description | Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN | Power Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible |
| Parts packaging code | TO-5 | TO-5 |
| package instruction | TO-5, 3 PIN | TO-5, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| ECCN code | EAR99 | EAR99 |
| Maximum collector current (IC) | 2 A | 2 A |
| Collector-emitter maximum voltage | 80 V | 75 V |
| Configuration | Single | Single |
| Minimum DC current gain (hFE) | 30 | 30 |
| JEDEC-95 code | TO-5 | TO-5 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | PNP |
| Maximum power dissipation(Abs) | 1 W | 10 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 30 MHz | 50 MHz |