INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3835G
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 0.5V(Max)@ I
C
=3A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V (Min)
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CM
Collector Current-Continuous
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VALUE
UNIT
200
V
120
V
8
V
7
A
14
A
3
A
70
W
℃
℃
Collector Current-Pulse
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 50mA ; I
B
= 0
I
C
= 3A; I
B
= 0.3A
B
2SC3835G
MIN
120
TYP.
MAX
UNIT
V
0.5
1.2
100
100
160
220
30
110
V
V
μA
μA
I
C
= 3A; I
B
= 0.3A
B
V
CB
= 200V; I
E
= 0
V
EB
= 8V; I
C
= 0
I
C
= 3A ; V
CE
= 4V
Current-Gain—Bandwidth Product
Output Capacitance
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
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I
E
= -0.5A ; V
CE
= 12V
I
E
=0 ; V
CB
=10V;f
test
=1.0MHz
I
C
= 3A ;I
B1
=0.3A; I
B2
= -0.6A
R
L
= 16.7Ω; V
CC
= 50V
MHz
pF
0.5
3.0
0.5
μs
μs
μs
isc Website：www.iscsemi.cn
2
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