STF8A80
Bi-Directional Triode Thyristor
Symbol
○
2.T2
Features
◆
Repetitive Peak Off-State Voltage : 800V
◆
R.M.S On-State Current ( I
T(RMS)
= 8 A )
◆
High Commutation dv/dt
◆
Isolation Voltage ( V
ISO
= 1500V AC )
TO-220F
▼▲
○
3.Gate
1.T1
○
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
V
ISO
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
800
T
C
= 89
°C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
8.0
80/88
32
5.0
0.5
2.0
10
A.C. 1 minute
1500
- 40 ~ 125
- 40 ~ 150
2.0
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Units
V
A
A
A
2
s
W
W
A
V
V
°C
°C
g
Aug, 2008. Rev. A
copyright@Winsemi Semiconductor Co., Ltd., All rights reserved.
1/5
STF8A80
Electrical Characteristics
Ratings
Symbol
Items
Conditions
Min.
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125
°C,
V
D
= 1/2 V
DRM
T
J
= 125
°C,
[di/dt]c = -4.0 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125
°C
I
T
= 12 A, Inst. Measurement
─
Unit
Typ.
─
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
─
V
V
mA
mA
V
─
─
─
─
─
─
─
0.2
10
─
─
─
─
─
─
─
─
(dv/dt)c
I
H
R
th(j-c)
─
15
─
─
V/㎲
mA
°C/W
─
─
─
3.7
2/5
STF8A80
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
V
GM
(10V)
10
1
P
GM
(5W)
Gate Voltage
[V]
25
℃
10
0
o
On-State
T
J
= 125 C
Current [A]
1
P
G(AV)
(0.5W)
I
GM
(2A)
10
T
J
= 25 C
10
0
o
V
GD
(0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
8
Power
θ
Dissipation [W]
7
6
5
4
3
2
1
0
0
1
2
80
90
Fig 4. On State Current vs.
Allowable Case Temperature
θ
= 180
o
o
130
π
θ
2
π
o
θ
= 150
θ
= 120
Allowable Case
Temperature
[
o
C]
120
θ
= 90
360°
o
o
θ
: Conduction Angle
θ
= 60
θ
= 30
110
θ
= 30
o
o
o
o
100
π
θ
360°
θ
2
π
θ
= 60
θ
= 90
o
θ
= 120
o
θ
= 150
o
θ
: Conduction Angle
θ
= 180
RMS On-State Current [A]
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
100
10
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Surge On-State
Current [A]
60
80
60Hz
o
V
V
GT
V
GT
(t C)(25 C)
o
1
+
GT1
_
GT1
_
GT3
V
V
40
50Hz
20
0
0
0.1
10
10
1
10
2
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
STF8A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
Transient
Thermal
o
Impedance
[ C/W]
GT
I
GT
(t IC)(25 C)
o
o
1
I
I
+
GT1
_
GT1
1
I
_
GT3
0.1
-50
0
50
100
o
0.1
150
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼▲
6V
●
A
▼▲
R
G
6V
●
A
▼▲
R
G
6V
●
A
V
●
V
●
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/5
Analog electronics
京公网安备 11010802033920号
EEWORLD
