WFY3P02
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
SOT−
Features
■ -3.2A, -20V, R
DS(on)
(Max 85mΩ)@V
GS
=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
G
S
D
SOT-23
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Drain Source Voltage
Continuous Drain Current(Note 1)
Steady State
t≤10s
Steady State
t≤10s
Steady State
t=10s
Tc=25℃
Tc=85℃
Tc=25℃
Tc=25℃
Tc=25℃
Tc=85℃
Tc=25℃
Parameter
Value
-20
−2.4
-1.7
-3.2
0.73
1.25
-1.8
-1.3
0.42
-7.5
±8
C=100pF,R
S
= 1500Ω
225
-55~150
260
Units
V
A
P
D
I
D
P
D
I
DM
V
GS
ESD
T
J,
T
stg
T
L
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Gate to Source Voltage
ESD Capability (Note 3)
Junction and Storage Temperature
W
A
W
A
V
V
℃
℃
Maximum lead Temperature for soldering purposes
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
R
QJA
R
QJA
R
QJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
-
Typ
-
Max
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P02-1
WFY3P02
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current(
Note 4)
Drain cut−off current(
Note 4)
Drain−source breakdown voltage
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
GS(th)
Test Condition
V
GS
= ±8 V, V
DS
= 0 V
V
DS
= -16 V, V
GS
= 0 V
I
D
= -250 μA, V
GS
= 0 V
V
DS
= V
DS
I
D
=-250 μA
V
GS
= −4.5 V, I
D
= −1.6 A
Min
-
-
-20
-0.40
-
Type
-
-
-
-0.72
70
90
112
Max
±100
-1
-
-1.5
85
120
200
-
-
-
-
-
-
Unit
nA
μA
V
V
Drain−source ON resistance
R
DS(ON)
V
GS
= −2.5 V, I
D
= −1.3 A
V
GS
= −1.8 V, I
D
= −0.9 A
mΩ
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
(Note 5)
gfs
C
iss
C
rss
C
oss
tr
ton
tf
toff
Qg
V
DS
= −5.0 V, I
D
= −2.3 A
V
DS
= -10 V,
V
GS
= 0 V,
f = 1 MHz
V
GS
= −4.5 V,
V
DS
= −10 V,
I
D
=
-
-
-
-
-
-
-
-
-
-
-
-
75
675
75
100
12.6
7.5
21.0
30.2
7.5
1.2
2.2
6.5
S
pF
Turn−on time
Fall time
Turn−off time
ns
-
-
8.5
nC
-
-
-
Ω
−1.6 A,
R
G
= 6.0 Ω
V
GS
= −4.5 V,
V
DS
= −10 V,
Total gate charge (gate−source plus
gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Reverse Recovery Charge
Qgs
Qgd
R
G
I
D
= −1.6 A
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Charge Time
Discharge Time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
t
a
t
b
Q
rr
Test Condition
-
-
I
DR
= -2.4A, V
GS
= 0 V
I
DR
= -2.4A,
V
GS
= 0 V,
dI
DR
/ dt = 100 A / μs
Min
-
-
-
-
Type
-
-
-0.82
12.8
9.9
3.0
Max
-2.4
-7.5
-1.2
15
Unit
A
A
V
ns
ns
ns
-
1008
-
μC
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
Steady, all for your advance
WFY3P02
Fig. 1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On−Resistance vs. Drain Current and
On−
Temperature
Fig.4 Diode Forward Voltage vs. Current
Fig.5 On-Resistance Variation vs Junction
Temperature
Fig.6 Gate Charge Characteristics
3/5
Steady, all for your advance
WFY3P02
Fig.7 Resistive Switching Time Variation
vs. Gate Resistance
Fig.8 Maximum Drain Current vs Case
Temperature
Fig.9 Drain−to−Source Leakage Current
Fig.9 Drain−to−
vs. Voltage
Fig.10 On−Resistance vs. Drain Current and
Fig.10 On−
Temperature
4/5
Steady, all for your advance
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